onsemi Single Bipolar Transistors BD17910STU

Description
Bipolar (BJT) Transistor NPN 80V 3A 3MHz 30W Through Hole TO-126-3
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor NPN 80V 3A 3MHz 30W Through Hole TO-126-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - BD17910STU-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
BD17910STU-ND
Single Bipolar Transistors BD17910STU-ND
Bipolar (BJT) Transistor NPN 80V 3A 3MHz 30W Through Hole TO-126-3

Bipolar (BJT) Transistor NPN 80V 3A 3MHz 30W Through Hole TO-126-3

Buy Now Datasheet
Single Bipolar Transistors - BD17910STU - ODG (Origin Data Global)
Shenzhen, China
Single Bipolar Transistors
BD17910STU
Single Bipolar Transistors BD17910STU
TRANS NPN 80V 3A TO126-3

TRANS NPN 80V 3A TO126-3

Supplier's Site
TRANSISTORS - Transistors (BJT) - Single - BD17910STU - 200958-BD17910STU - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - BD17910STU
200958-BD17910STU
TRANSISTORS - Transistors (BJT) - Single - BD17910STU 200958-BD17910STU
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 200958-BD17910STU Packaging: Tube/Rail Mounting: Through Hole Frequency - Transition: 3MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-126 Maximum Current Collector: 3A VCEO Maximum Collector-Emitter Breakdown Voltage: 80V Max Vce (sat): 800mV @ 100mA, 1A Collector Cut-off Current(Max): 100μA (ICBO) Typical Gain (hFE) (Min): 63 @ 150mA, 2V Maximum Power Dissipation: 30W Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Limited

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 200958-BD17910STU
Packaging: Tube/Rail
Mounting: Through Hole
Frequency - Transition: 3MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-126
Maximum Current Collector: 3A
VCEO Maximum Collector-Emitter Breakdown Voltage: 80V
Max Vce (sat): 800mV @ 100mA, 1A
Collector Cut-off Current(Max): 100μA (ICBO)
Typical Gain (hFE) (Min): 63 @ 150mA, 2V
Maximum Power Dissipation: 30W
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BD17910STU - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
BD17910STU
Discrete Semiconductor Products - Transistors - Bipolar (BJT) BD17910STU
TRANS NPN 80V 3A TO126-3

TRANS NPN 80V 3A TO126-3

Supplier's Site

Technical Specifications

  DigiKey ODG (Origin Data Global) Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors
Product Number BD17910STU-ND BD17910STU 200958-BD17910STU BD17910STU
Product Name Single Bipolar Transistors Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - BD17910STU Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN; NPN NPN; NPN
Package Type TO-225AA, TO-126-3 TO-225AA, TO-126-3 SOT3; TO-126
IC(max) 3000 milliamps 3000 milliamps
VCEO 80 volts 80 volts
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