onsemi Single Bipolar Transistors BD17610STU

Description
Bipolar (BJT) Transistor PNP 45V 3A 3MHz 30W Through Hole TO-126-3
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor PNP 45V 3A 3MHz 30W Through Hole TO-126-3
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Single Bipolar Transistors - BD17610STU-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
BD17610STU-ND
Single Bipolar Transistors BD17610STU-ND
Bipolar (BJT) Transistor PNP 45V 3A 3MHz 30W Through Hole TO-126-3

Bipolar (BJT) Transistor PNP 45V 3A 3MHz 30W Through Hole TO-126-3

Buy Now Datasheet
 - BD17610STU - Rochester Electronics
Newburyport, MA, United States
PNP Epitaxial Silicon Transistor

PNP Epitaxial Silicon Transistor

Supplier's Site Datasheet
 - BD17610STU - Rochester Electronics
Newburyport, MA, United States
PNP Epitaxial Silicon Transistor

PNP Epitaxial Silicon Transistor

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single - BD17610STU - 121238-BD17610STU - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - BD17610STU
121238-BD17610STU
TRANSISTORS - Transistors (BJT) - Single - BD17610STU 121238-BD17610STU
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 121238-BD17610STU Packaging: Tube/Rail Mounting: Through Hole Frequency - Transition: 3MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-126 Maximum Current Collector: 3A VCEO Maximum Collector-Emitter Breakdown Voltage: 45V Max Vce (sat): 800mV @ 100mA, 1A Collector Cut-off Current(Max): 100μA (ICBO) Typical Gain (hFE) (Min): 63 @ 150mA, 2V Maximum Power Dissipation: 30W Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Balance Quantity per package: 1,920

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 121238-BD17610STU
Packaging: Tube/Rail
Mounting: Through Hole
Frequency - Transition: 3MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-126
Maximum Current Collector: 3A
VCEO Maximum Collector-Emitter Breakdown Voltage: 45V
Max Vce (sat): 800mV @ 100mA, 1A
Collector Cut-off Current(Max): 100μA (ICBO)
Typical Gain (hFE) (Min): 63 @ 150mA, 2V
Maximum Power Dissipation: 30W
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Balance
Quantity per package: 1,920

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BD17610STU - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
BD17610STU
Discrete Semiconductor Products - Transistors - Bipolar (BJT) BD17610STU
TRANS PNP 45V 3A TO126-3

TRANS PNP 45V 3A TO126-3

Supplier's Site

Technical Specifications

  DigiKey Rochester Electronics Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors RF Transistors Transistors Bipolar RF Transistors
Product Number BD17610STU-ND BD17610STU 121238-BD17610STU BD17610STU
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - BD17610STU Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP PNP PNP; PNP
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