Bipolar (BJT) Transistor NPN 60V 1.5A 1.25W Through Hole TO-126-3
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1022848-BD1376S
Packaging: Bulk
Mounting: Through Hole
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-126
Maximum Current Collector: 1.5A
VCEO Maximum Collector-Emitter Breakdown Voltage: 60V
Max Vce (sat): 500mV @ 50mA, 500mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 40 @ 150mA, 2V
Maximum Power Dissipation: 1.25W
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance
Quantity per package: 250
TRANS NPN 60V 1.5A TO126-3
| DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Transistors | Transistors | Bipolar RF Transistors |
| Product Number | BD1376S-ND | 1022848-BD1376S | BD1376S |
| Product Name | Single Bipolar Transistors | TRANSISTORS - Transistors (BJT) - Single - BD1376S | Discrete Semiconductor Products - Transistors - Bipolar (BJT) |
| Polarity | NPN | NPN; NPN |
