onsemi TRANSISTORS - Transistors (BJT) - Single - BD13710S BD13710S

Manufacturer: ON Semiconductor
Win Source Part Number: 717903-BD13710S
Packaging: Bulk
Mounting Style: Through Hole
Transistor Type: NPN
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-126-3
Status: Obsolete
Temperature Range - Operating: 150°C
Manufacturer Package: TO-225AA, TO-126-3
Current - Collector (Ic) (Maximum): 1.5A
Voltage - Collector Emitter Breakdown (Maximum): 60V
Current - Collector Cutoff (Maximum): 100nA (ICBO)
Popularity: Low
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Balance
Family Part Number: BD137
Manufacturer Pack Quantity: 250
MSL Level: 1 (Unlimited)
Vce Saturation (Maximum) at Ib, Ic: 500mV at 50mA, 500mA
DC Current Gain (hFE) (Minimum) at Ic, Vce: 63 at 150mA, 2V
Maximum Power: 1.25W

TRANS NPN 60V 1.5A TO-126 Product overview: BD13710S from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 1.5A. Search-friendly keywords include transistor, BJT, switching, amplification, 60V, 1.5A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-BD13710S can be used for catalog matching and distributor lookup.

Bipolar (BJT) Transistor NPN 60V 1.5A 1.25W Through Hole TO-126-3