onsemi Single Bipolar Transistors BD13710S

Description
Bipolar (BJT) Transistor NPN 60V 1.5A 1.25W Through Hole TO-126-3
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor NPN 60V 1.5A 1.25W Through Hole TO-126-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - BD13710S-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
BD13710S-ND
Single Bipolar Transistors BD13710S-ND
Bipolar (BJT) Transistor NPN 60V 1.5A 1.25W Through Hole TO-126-3

Bipolar (BJT) Transistor NPN 60V 1.5A 1.25W Through Hole TO-126-3

Buy Now Datasheet
Singapore
60V 1.5A Bipolar Transistor
276-BD13710S
60V 1.5A Bipolar Transistor 276-BD13710S
TRANS NPN 60V 1.5A TO-126 Product overview: BD13710S from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 1.5A. Search-friendly keywords include transistor, BJT, switching, amplification, 60V, 1.5A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-BD13710S can be used for catalog matching and distributor lookup.

TRANS NPN 60V 1.5A TO-126 Product overview: BD13710S from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 1.5A. Search-friendly keywords include transistor, BJT, switching, amplification, 60V, 1.5A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-BD13710S can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single - BD13710S - 717903-BD13710S - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - BD13710S
717903-BD13710S
TRANSISTORS - Transistors (BJT) - Single - BD13710S 717903-BD13710S
Manufacturer: ON Semiconductor Win Source Part Number: 717903-BD13710S Packaging: Bulk Mounting Style: Through Hole Transistor Type: NPN Categories: Discrete Semiconductor Products Supplier Device Package: TO-126-3 Status: Obsolete Temperature Range - Operating: 150°C Manufacturer Package: TO-225AA, TO-126-3 Current - Collector (Ic) (Maximum): 1.5A Voltage - Collector Emitter Breakdown (Maximum): 60V Current - Collector Cutoff (Maximum): 100nA (ICBO) Popularity: Low Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance Family Part Number: BD137 Manufacturer Pack Quantity: 250 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 500mV at 50mA, 500mA DC Current Gain (hFE) (Minimum) at Ic, Vce: 63 at 150mA, 2V Maximum Power: 1.25W

Manufacturer: ON Semiconductor
Win Source Part Number: 717903-BD13710S
Packaging: Bulk
Mounting Style: Through Hole
Transistor Type: NPN
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-126-3
Status: Obsolete
Temperature Range - Operating: 150°C
Manufacturer Package: TO-225AA, TO-126-3
Current - Collector (Ic) (Maximum): 1.5A
Voltage - Collector Emitter Breakdown (Maximum): 60V
Current - Collector Cutoff (Maximum): 100nA (ICBO)
Popularity: Low
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Balance
Family Part Number: BD137
Manufacturer Pack Quantity: 250
MSL Level: 1 (Unlimited)
Vce Saturation (Maximum) at Ib, Ic: 500mV at 50mA, 500mA
DC Current Gain (hFE) (Minimum) at Ic, Vce: 63 at 150mA, 2V
Maximum Power: 1.25W

Buy Now
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BD13710S - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
BD13710S
Discrete Semiconductor Products - Transistors - Bipolar (BJT) BD13710S
TRANS NPN 60V 1.5A TO126-3

TRANS NPN 60V 1.5A TO126-3

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors
Product Number BD13710S-ND 276-BD13710S 717903-BD13710S BD13710S
Product Name Single Bipolar Transistors 60V 1.5A Bipolar Transistor TRANSISTORS - Transistors (BJT) - Single - BD13710S Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN NPN
Package Type TO-225AA, TO-126-3 SOT3
IC(max) 1500 milliamps 1500 milliamps
VCEO 60 volts 60 volts
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