onsemi Single Bipolar Transistors BD137

Bipolar (BJT) Transistor NPN 60V 1.5A 1.25W Through Hole TO-126

Manufacturer: ON Semiconductor
Win Source Part Number: 804778-BD137
Packaging: Bulk
Mounting Style: Through Hole
Power - Max: 1.25W
Transistor Type: NPN
Part Status: Obsolete (End Of Life)
Supplier Device Package: TO-225AA
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: TO-225AA, TO-126-3
Current - Collector (Ic) (Maximum): 1.5A
Voltage - Collector Emitter Breakdown (Maximum): 60V
Current - Collector Cutoff (Maximum): 100nA (ICBO)
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 500
MSL Level: 1 (Unlimited)
Vce Saturation (Maximum) at Ib, Ic: 500mV at 50mA, 500mA
Part Number Series: BD137
DC Current Gain (hFE) (Min) at Ic, Vce: 40 at 150mA, 2V

TRANS NPN 60V 1.5A TO-252AA Product overview: BD137 from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 1.5A. Search-friendly keywords include transistor, BJT, switching, amplification, 60V, 1.5A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-BD137 can be used for catalog matching and distributor lookup.