onsemi BCW61DLT1

PNP silicon bipolar junction transistor for general-purpose applications in a 3-pin SOT-23 (TO-236AB) package, with a collector-emitter voltage rating of -32 Vdc, continuous collector current of -100 mA, and total device dissipation of 225 mW on FR-5 board or 300 mW on alumina substrate. The BCW61D variant has a minimum DC current gain (hFE) of 100 at IC = -10 mA and VCE = -5 V, and a maximum collector-emitter saturation voltage of -0.55 V at IC = -50 mA and IB = -1.25 mA. Junction and storage temperature range is -55 to +150 °C. Meets EIA-481 standards for tape and reel packaging.