onsemi Single Bipolar Transistors BCW33LT3

The BCW33LT3 is an NPN silicon transistor in the SOT-23 (TO-236) package, rated for a collector-emitter voltage of 32 Vdc and a continuous collector current of 100 mAdc. It is Pb-free, halogen-free/BFR-free, and RoHS compliant, with an operating junction and storage temperature range of -55°C to +150°C. The device is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications. Thermal resistance junction-to-ambient is 556°C/W on FR-5 board and 417°C/W on alumina substrate. It features a DC current gain (hFE) range of 420 to 800 at IC = 2.0 mA and VCE = 5.0 V, with a collector-emitter saturation voltage of up to 0.25 V under specified conditions.