The BCP56-10T1G is an NPN silicon epitaxial transistor designed for audio amplifier applications in surface mount medium power circuits. It is housed in the SOT-223 package with dimensions of 6.70 mm × 3.70 mm × 1.75 mm. The device has a maximum collector-emitter voltage of 80 V, a continuous collector current rating of 1 A, and a total power dissipation of 1.5 W at 25°C, derating at 12 mW/°C. The thermal resistance junction-to-ambient is 83.3 °C/W. Current gain hFE ranges from 63 to 160 at IC = 150 mA and VCE = 2 V. The current-gain bandwidth product is 130 MHz. The transistor meets AEC-Q101 qualifications and is RoHS compliant, Pb-free, and halogen-free. It is supplied in 1000-unit tape and reel packaging.
Transistor Polarity:NPN; Collector Emitter Voltage Max:80V; Continuous Collector Current:1A; Power Dissipation:1.5W; Transistor Mounting:Surface Mount; No. of Pins:4Pins; Transition Frequency:130MHz; DC Current Gain hFE Min:63hFE RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Transistors |
| Product Number | 27AC0806 |
| Product Name | Transistor Polarity Onsemi |
| Transistor Type | Transistor Polarity Onsemi |
