The BCP53T1G is a PNP silicon epitaxial transistor designed for audio amplifier applications in medium power surface mount circuits. Housed in the SOT-223 package, it supports wave and reflow soldering. Maximum ratings include a collector-emitter voltage of -80 V, a collector current of 1.5 A, and a power dissipation of 1.25 W at 25°C. The junction temperature range is -65°C to +150°C with a thermal resistance of 83.3°C/W. It is Pb-free, halogen-free, RoHS compliant, and AEC-Q101 qualified. DC current gain (hFE) ranges from 40 to 250 at IC = -150 mA and VCE = -2 V. Collector-emitter saturation voltage is no more than -0.5 V at IC = -500 mA and IB = -50 mA. Current gain-bandwidth product is 50 MHz at IC = -10 mA and VCE = -5 V.
BJT, PNP, -80V. SOT-223, FULL REEL; Transistor Polarity:PNP; Collector Emitter Voltage Max:80V; Continuous Collector Current:1.5A; Power Dissipation:1.5W; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 25AC6269 |
| Product Name | Bjt, Pnp, -80V. Sot-223, Full Reel; Transistor Polarity Onsemi |
| Polarity | PNP |