The BCP53-10T1G is a PNP silicon epitaxial transistor designed for medium power surface mount applications, housed in the SOT-223 package. It has a collector-emitter voltage rating of -80 V, a continuous collector current of 1.5 A, and a total power dissipation of 1125 mW at 25°C ambient temperature. The device has a thermal resistance of 83.3 °C/W when surface mounted. The DC current gain (hFE) ranges from 63 to 160 at a collector current of 150 mA and collector-emitter voltage of -2.0 V. The transistor is Pb-free, halogen-free, RoHS compliant, and AEC-Q101 qualified. The SOT-223 package features formed leads to absorb thermal stress during soldering and supports both wave and reflow soldering processes.
BIPOLAR TRANSISTOR, PNP, -80V, FULL REEL; Transistor Polarity:PNP; Collector Emitter Voltage Max:80V; Continuous Collector Current:1.5A; Power Dissipation:1.5W; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 29AC2715 |
| Product Name | Bipolar Transistor, Pnp, -80V, Full Reel; Transistor Polarity Onsemi |
| Polarity | PNP |