onsemi BC860C

Description
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon
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Description
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon
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Datasheet
Datasheet Summary
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PNP epitaxial silicon transistor in SOT-23 package for switching and amplifier applications, with a collector current rating of -100 mA, collector-emitter voltage of -45 V, and collector power dissipation of 310 mW; features a DC current gain (hFE) range of 420 to 800 in the C classification, noise figure of 1.2 to 2 dB for BC860 variants, and a current gain bandwidth product of 150 MHz. Package dimensions follow SOT-23 standard with a length of 2.90 mm, width of 1.90 mm, and height of 1.14 mm. Complies with RoHS and is suitable for automatic insertion.

Datasheet Summary
Powered by GS/AI

PNP epitaxial silicon transistor in SOT-23 package for switching and amplifier applications, with a collector current rating of -100 mA, collector-emitter voltage of -45 V, and collector power dissipation of 310 mW; features a DC current gain (hFE) range of 420 to 800 in the C classification, noise figure of 1.2 to 2 dB for BC860 variants, and a current gain bandwidth product of 150 MHz. Package dimensions follow SOT-23 standard with a length of 2.90 mm, width of 1.90 mm, and height of 1.14 mm. Complies with RoHS and is suitable for automatic insertion.

Suppliers

Company
Product
Description
Supplier Links
 - BC860C - Rochester Electronics
Newburyport, MA, United States
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon

Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Bipolar RF Transistors
Product Number BC860C
Polarity PNP
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