onsemi Single Bipolar Transistors BC859BLT1

Description
Bipolar (BJT) Transistor PNP 30V 100mA 100MHz 300mW Surface Mount SOT-23-3 (TO-236)
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor PNP 30V 100mA 100MHz 300mW Surface Mount SOT-23-3 (TO-236)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - BC859BLT1-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
BC859BLT1-ND
Single Bipolar Transistors BC859BLT1-ND
Bipolar (BJT) Transistor PNP 30V 100mA 100MHz 300mW Surface Mount SOT-23-3 (TO-236)

Bipolar (BJT) Transistor PNP 30V 100mA 100MHz 300mW Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - BC859BLT1 - 098653-BC859BLT1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - BC859BLT1
098653-BC859BLT1
TRANSISTORS - Transistors (BJT) - Single - BC859BLT1 098653-BC859BLT1
Manufacturer: ON Semiconductor Win Source Part Number: 098653-BC859BLT1 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 100MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 (TO-236) Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 30V Max Vce (sat): 650mV @ 5mA, 100mA Collector Cut-off Current(Max): 15nA (ICBO) Typical Gain (hFE) (Min): 220 @ 2mA, 5V Maximum Power Dissipation: 300mW Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 098653-BC859BLT1
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 100MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 30V
Max Vce (sat): 650mV @ 5mA, 100mA
Collector Cut-off Current(Max): 15nA (ICBO)
Typical Gain (hFE) (Min): 220 @ 2mA, 5V
Maximum Power Dissipation: 300mW
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BC859BLT1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
BC859BLT1
Discrete Semiconductor Products - Transistors - Bipolar (BJT) BC859BLT1
TRANS PNP 30V 0.1A SOT23-3

TRANS PNP 30V 0.1A SOT23-3

Supplier's Site
TRANS PNP 30V 0.1A SOT-23 - 598-BC859BLT1 - Utmel Electronic Limited
Hong Kong, China
TRANS PNP 30V 0.1A SOT-23
598-BC859BLT1
TRANS PNP 30V 0.1A SOT-23 598-BC859BLT1
TRANS PNP 30V 0.1A SOT-23

TRANS PNP 30V 0.1A SOT-23

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited
Product Category Transistors Transistors Bipolar RF Transistors Transistors
Product Number BC859BLT1-ND 098653-BC859BLT1 BC859BLT1 598-BC859BLT1
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - BC859BLT1 Discrete Semiconductor Products - Transistors - Bipolar (BJT) TRANS PNP 30V 0.1A SOT-23
Polarity PNP PNP; PNP PNP; PNP
Package Type SOT23; TO-236-3, SC-59, SOT-23-3 SOT3; SOT23; SOT-23-3 (TO-236)
Packing Method Tape Reel; Tape & Reel (TR)
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