Bipolar (BJT) Transistor Array 2 PNP (Dual) 30V 100mA 100MHz 500mW Surface Mount SOT-563
Bipolar (BJT) Transistor Array 2 PNP (Dual) 30V 100mA 100MHz 500mW Surface Mount SOT-563
Bipolar (BJT) Transistor Array 2 PNP (Dual) 30V 100mA 100MHz 500mW Surface Mount SOT-563
PNP BJT Transistor, SOT-563, 30V, 100mA, 100MHz, 420hFE Product overview: BC858CDXV6T1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 100mA, 100MHz. Search-friendly keywords include transistor, BJT, switching, amplification, 30V, 100mA, 100MHz, Bipolar Transistor, Bipolar Transistor Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 277-BC858CDXV6T1G can be used for catalog matching and distributor lookup.
Manufacturer: ON Semiconductor
Win Source Part Number: 744741-BC858CDXV6T1G
Packaging: Reel - TR
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: SOT-563, SOT-666
Mounting: SMD
Power - Max: 500mW
Transistor Type: 2 PNP (Dual)
Frequency - Transition: 100MHz
Family Name: BC858CDXV6
Categories: Discrete Semiconductor Products
Manufacturer Homepage: www.onsemi.com
Manufacturer Package: SOT-563
Current - Collector (Ic) (Maximum): 100mA
Voltage - Collector Emitter Breakdown (Maximum): 30V
Vce Saturation (Maximum) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Maximum): 15nA (ICBO)
DC Current Gain (hFE) (Minimum) @ Ic, Vce: 420 @ 2mA, 5V
Alternative Parts (Cross-Reference): BFX48DCSM; BC858CDXV6T5G;
Introduction Date: March 14, 2003
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2023
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Balance
Bipolar Transistors - BJT 100mA 30V Dual PNP
BIPOLAR TRANSISTOR, PNP, -30V, FULL REEL; Transistor Polarity:PNP; Collector Emitter Voltage Max:30V; Continuous Collector Current:100mA; Power Dissipation:357mW; Transistor Mounting:Surface Mount; No. of Pins:6Pins; Product Range:- RoHS Compliant: Yes
TRANSISTOR, DUAL PNP, -30V, SOT-563; Transistor Polarity:Dual PNP; Collector Emitter Voltage V(br)ceo:-30V; Transition Frequency ft:100MHz; Power Dissipation Pd:500mW; DC Collector Current:-100mA; DC Current Gain hFE:420hFE; RoHS Compliant: Yes
TRANS 2PNP 30V 0.1A SOT-563
TRANS 2PNP 30V 0.1A SOT-563
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Bipolar RF Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | BC858CDXV6T1GOSDKR-ND | 277-BC858CDXV6T1G | 744741-BC858CDXV6T1G | BC858CDXV6T1G | 41K9614 | 30AC9440 | BC858CDXV6T1G | BC858CDXV6T1G |
| Product Name | Bipolar Transistor Arrays | 30V 100mA 100MHz Bipolar Transistor | TRANSISTORS - Transistors (BJT) - Arrays - BC858CDXV6T1G | Bipolar Transistors - BJT | Bipolar Transistor, Pnp, -30V, Full Reel; Transistor Polarity Onsemi | Transistor, Dual Pnp, -30V, Sot-563; Transistor Polarity Onsemi | Bipolar Transistor Arrays | Discrete Semiconductor Products - Transistors - Bipolar (BJT) |
| Polarity | PNP | PNP | PNP | PNP | PNP | 2 PNP (Dual); PNP | ||
| Package Type | SOT-563, SOT-666 | SOT3 | TO-3 | TO-3 | SOT-563, SOT-666 | |||
| IC(max) | 100 milliamps | 100 milliamps | 100 milliamps | 100 milliamps | ||||
| VCEO | 30 volts | 30 volts | 30 volts | 30 volts | ||||
| VCBO | -30 volts |
