The BC857CLT1G is a PNP silicon general-purpose transistor in a SOT-23 package, rated for a collector-emitter voltage of -45 V and a continuous collector current of -100 mA. It has a total device dissipation of 300 mW on an alumina substrate with a thermal resistance of 417 °C/W. The device is RoHS 3 compliant, Pb-free, halogen-free, and AEC-Q101 qualified. Its DC current gain (hFE) ranges from 420 to 800 at IC = -2.0 mA and VCE = -5.0 V. The junction and storage temperature range is -55 °C to +150 °C.
BIPOLAR TRANSISTOR, PNP -45V SOT-23, FULL REEL; Transistor Polarity:PNP; Collector Emitter Voltage Max:45V; Continuous Collector Current:100mA; Power Dissipation:300mW; Transistor Mounting:Surface Mount; No. of Pins:3Pins RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 29AC2735 |
| Product Name | Bipolar Transistor, Pnp -45V Sot-23, Full Reel; Transistor Polarity Onsemi |
| Polarity | PNP |
