onsemi TRANSISTORS - Transistors (BJT) - Arrays - BC857C BC857C

Description
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon
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Description
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - BC857C - Rochester Electronics
Newburyport, MA, United States
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon

Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Arrays - BC857C - 232287-BC857C - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays - BC857C
232287-BC857C
TRANSISTORS - Transistors (BJT) - Arrays - BC857C 232287-BC857C
Manufacturer: ON Semiconductor Win Source Part Number: 232287-BC857C Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 100MHz Transistor Polarity: 2 PNP (Dual) Family Name: BC857C Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-88/SC70-6/SOT-363 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 45V Max Vce (sat): 650mV @ 5mA, 100mA Collector Cut-off Current(Max): 15nA (ICBO) Typical Gain (hFE) (Min): 420 @ 2mA, 5V Maximum Power Dissipation: 380mW Alternative Parts (Cross-Reference): BC 807-40 B5000; BC807-40; BC807-16-T&R; Introduction Date: May 04, 1998 ECCN: EAR99 Country of Origin: Philippines, Republic of Korea, Thailand Estimated EOL Date: Obsolete Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Sufficient Application Field: Used in Signal Processing, Power Management, Portable Devices, Consumer Electronics, Industrial, Automotive

Manufacturer: ON Semiconductor
Win Source Part Number: 232287-BC857C
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 100MHz
Transistor Polarity: 2 PNP (Dual)
Family Name: BC857C
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-88/SC70-6/SOT-363
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 45V
Max Vce (sat): 650mV @ 5mA, 100mA
Collector Cut-off Current(Max): 15nA (ICBO)
Typical Gain (hFE) (Min): 420 @ 2mA, 5V
Maximum Power Dissipation: 380mW
Alternative Parts (Cross-Reference): BC 807-40 B5000; BC807-40; BC807-16-T&R;
Introduction Date: May 04, 1998
ECCN: EAR99
Country of Origin: Philippines, Republic of Korea, Thailand
Estimated EOL Date: Obsolete
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Signal Processing, Power Management, Portable Devices, Consumer Electronics, Industrial, Automotive

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Technical Specifications

  Rochester Electronics Win Source Electronics
Product Category Bipolar RF Transistors Transistors
Product Number BC857C 232287-BC857C
Product Name TRANSISTORS - Transistors (BJT) - Arrays - BC857C
Polarity PNP PNP; 2 PNP (Dual)
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