The BC856BWT1 is a PNP silicon bipolar transistor designed for general purpose amplifier and switching applications, housed in the SC-70/SOT-323 surface mount package. It has a collector-emitter voltage rating of -65 V, a continuous collector current of -100 mA, and a peak collector current of -130 mA. The device dissipates up to 150 mW and has a thermal resistance of 883 °C/W. It meets AEC-Q101 qualifications and is RoHS compliant, Pb-free, and halogen-free. The junction and storage temperature range is -55 to +150 °C.
TRANS PNP GP 65V 100MA SOT-323 / Bipolar (BJT) Transistor Product overview: BC856BWT1 from ON Semiconductor is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 65V, 100MA. Search-friendly keywords include transistor, BJT, switching, amplification, 65V, 100MA, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-BC856BWT1 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 276-BC856BWT1 |
| Product Name | 65V 100MA Bipolar Transistor |
| Package Type | Bulk |
