The BC856BDW1T1G is a dual PNP bipolar junction transistor (BJT) designed for general-purpose amplifier applications. It features a maximum collector-emitter voltage of -65 V and a continuous collector current rating of -100 mA, with a total device dissipation of 380 mW. The transistor is housed in a compact SOT-363 package, suitable for low-power surface mount applications. It is RoHS compliant and is qualified for automotive applications under AEC-Q101 standards. The device exhibits a DC current gain (hFE) ranging from 220 to 420, depending on the specific operating conditions. The BC856BDW1T1G is ideal for engineers seeking reliable performance in various electronic circuits.
TRANS 2PNP 65V 0.1A SC88/SC70-6
Manufacturer: ON Semiconductor
Win Source Part Number: 011143-BC856BDW1T1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 100MHz
Transistor Polarity: 2 PNP (Dual)
Family Name: BC856BDW1
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-88/SC70-6/SOT-363
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 65V
Max Vce (sat): 650mV @ 5mA, 100mA
Collector Cut-off Current(Max): 15nA (ICBO)
Typical Gain (hFE) (Min): 220 @ 2mA, 5V
Maximum Power Dissipation: 380mW
Alternative Parts (Cross-Reference): BC856BDW1T3G; SBC856BDW1T3G; SBC856BDW1T1G;
Introduction Date: December 06, 2001
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2026
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Power Management, Industrial
Bipolar (BJT) Transistor Array 2 PNP (Dual) 65V 100mA 100MHz 380mW Surface Mount SC-88/SC70-6/SOT-363
Bipolar (BJT) Transistor Array 2 PNP (Dual) 65V 100mA 100MHz 380mW Surface Mount SC-88/SC70-6/SOT-363
Bipolar (BJT) Transistor Array 2 PNP (Dual) 65V 100mA 100MHz 380mW Surface Mount SC-88/SC70-6/SOT-363
Dual PNP BJT, 65V, 100mA, 100MHz, SOT-363-6 Product overview: BC856BDW1T1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 65V, 100mA, 100MHz. Search-friendly keywords include transistor, BJT, switching, amplification, Dual, 65V, 100mA, 100MHz, Bipolar Transistor, Bipolar Transistor Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 277-BC856BDW1T1G can be used for catalog matching and distributor lookup.
Bipolar Transistors - BJT 100mA 80V Dual PNP
65V 380mW 220@2mA,5V 100mA 2PCSPNP SOT-363 Bipolar Transistors - BJT ROHS
TRANS 2PNP 65V 0.1A SC88/SC70-6
TRANSISTOR, PNP, DUAL, -65V SOT-363; Transistor Polarity:Dual PNP; Collector Emitter Voltage V(br)ceo:-65V; DC Collector Current:100mA; Power Dissipation Pd:380mW; DC Current Gain hFE:290hFE; No. of Pins:6Pins; MSL:MSL 1 - Unlimited RoHS Compliant: Yes
TRANSISTOR, PNP, DUAL, -65V SOT-363, FULL REEL; Transistor Polarity:Dual PNP; Collector Emitter Voltage V(br)ceo:-65V; DC Collector Current:-100mA; Power Dissipation Pd:380mW; DC Current Gain hFE:290hFE; No. of Pins:3Pins RoHS Compliant: Yes
Bipolar (BJT) Array Transistor, General Purpose, Dual PNP, -65 V, 380 mW, -100 mA, 220, SOT-363 RoHS Compliant: Yes
| ODG (Origin Data Global) | Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | DigiKey | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | LCSC Electronics Technology (HK) Limited | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Transistors | Transistors | Bipolar RF Transistors |
| Product Number | BC856BDW1T1G | 011143-BC856BDW1T1G | 1844956 | 1844956P | BC856BDW1T1GOSDKR-ND | 277-BC856BDW1T1G | BC856BDW1T1G | BC856BDW1T1G | BC856BDW1T1G | 10N9391 | 26K3474 | 90W4264 |
| Product Name | Bipolar Transistor Arrays | TRANSISTORS - Transistors (BJT) - Arrays - BC856BDW1T1G | Bipolar Transistors | Bipolar Transistors | Bipolar Transistor Arrays | Dual 65V 100mA 100MHz Bipolar Transistor | Bipolar Transistors - BJT | Triode/MOS Tube/Transistor >> Bipolar Transistors - BJT | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Transistor, Pnp, Dual, -65V Sot-363; Transistor Polarity Onsemi | Transistor, Pnp, Dual, -65V Sot-363, Full Reel; Transistor Polarity Onsemi | Bipolar (Bjt) Array Transistor, General Purpose, Dual Pnp, -65 V, 380 Mw, -100 Ma, 220, Sot-363 Rohs Compliant Onsemi |
| Polarity | 2 PNP (Dual); PNP | 2 PNP (Dual); PNP | PNP | PNP | PNP | PNP | PNP | PNP | PNP | PNP | ||
| Package Type | 6-TSSOP, SC-88, SOT-363 | SOT3; SC-88/SC70-6/SOT-363 | Sot-363 | SOT-363 | 6-TSSOP, SC-88, SOT-363 | TO-3; SOT3 | TO-3; SOT3 | TO-3; SOT3 | ||||
| IC(max) | 100 milliamps | 100 milliamps | 100 milliamps | 100 milliamps | 100 milliamps | |||||||
| VCEO | 65 volts | 65 volts | 65 volts | 65 volts | 65 volts | |||||||
| Operating Frequency | 100 MHz | 100 MHz |
