onsemi BC850C

Description
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon
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Description
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon
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Datasheet
Datasheet Summary
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NPN silicon transistor for switching and amplifier applications, in SOT-23 package with dimensions of 2.90 mm × 1.30 mm × 0.95 mm, rated for 45 V collector-emitter voltage, 100 mA collector current, and 310 mW power dissipation, with a minimum DC current gain of 420 in the C classification, and low noise performance of 1.4 to 3 dB for frequencies from 30 Hz to 15 kHz. Meets AEC-Q200 qualification and RoHS standards.

Datasheet Summary
Powered by GS/AI

NPN silicon transistor for switching and amplifier applications, in SOT-23 package with dimensions of 2.90 mm × 1.30 mm × 0.95 mm, rated for 45 V collector-emitter voltage, 100 mA collector current, and 310 mW power dissipation, with a minimum DC current gain of 420 in the C classification, and low noise performance of 1.4 to 3 dB for frequencies from 30 Hz to 15 kHz. Meets AEC-Q200 qualification and RoHS standards.

Suppliers

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Product
Description
Supplier Links
 - BC850C - Rochester Electronics
Newburyport, MA, United States
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon

Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Bipolar RF Transistors
Product Number BC850C
Polarity NPN
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