onsemi TRANSISTORS - Transistors (BJT) - Arrays - BC848CPDW1T1G BC848CPDW1T1G

Description
Manufacturer: ON Semiconductor Win Source Part Number: 011137-BC848CPDW1T1G Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 100MHz Transistor Polarity: NPN, PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-88/SC70-6/SOT-363 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 30V Max Vce (sat): 600mV @ 5mA, 100mA Collector Cut-off Current(Max): 15nA (ICBO) Typical Gain (hFE) (Min): 420 @ 2mA, 5V Maximum Power Dissipation: 250mW Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Balance
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 011137-BC848CPDW1T1G Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 100MHz Transistor Polarity: NPN, PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-88/SC70-6/SOT-363 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 30V Max Vce (sat): 600mV @ 5mA, 100mA Collector Cut-off Current(Max): 15nA (ICBO) Typical Gain (hFE) (Min): 420 @ 2mA, 5V Maximum Power Dissipation: 250mW Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors (BJT) - Arrays - BC848CPDW1T1G - 011137-BC848CPDW1T1G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays - BC848CPDW1T1G
011137-BC848CPDW1T1G
TRANSISTORS - Transistors (BJT) - Arrays - BC848CPDW1T1G 011137-BC848CPDW1T1G
Manufacturer: ON Semiconductor Win Source Part Number: 011137-BC848CPDW1T1G Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 100MHz Transistor Polarity: NPN, PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-88/SC70-6/SOT-363 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 30V Max Vce (sat): 600mV @ 5mA, 100mA Collector Cut-off Current(Max): 15nA (ICBO) Typical Gain (hFE) (Min): 420 @ 2mA, 5V Maximum Power Dissipation: 250mW Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 011137-BC848CPDW1T1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 100MHz
Transistor Polarity: NPN, PNP
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-88/SC70-6/SOT-363
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 30V
Max Vce (sat): 600mV @ 5mA, 100mA
Collector Cut-off Current(Max): 15nA (ICBO)
Typical Gain (hFE) (Min): 420 @ 2mA, 5V
Maximum Power Dissipation: 250mW
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Balance

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Technical Specifications

  Win Source Electronics
Product Category Logic Level Translators
Product Number 011137-BC848CPDW1T1G
Product Name TRANSISTORS - Transistors (BJT) - Arrays - BC848CPDW1T1G
Operating Temperature -55 to 150 C (-67 to 302 F)
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