onsemi Bipolar Transistor Arrays BC848CDW1T1G

Description
TRANS 2NPN 30V 0.1A SC88/SC70-6
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Description
TRANS 2NPN 30V 0.1A SC88/SC70-6
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Product
Description
Supplier Links
Bipolar Transistor Arrays - BC848CDW1T1G - ODG (Origin Data Global)
Shenzhen, China
Bipolar Transistor Arrays
BC848CDW1T1G
Bipolar Transistor Arrays BC848CDW1T1G
TRANS 2NPN 30V 0.1A SC88/SC70-6

TRANS 2NPN 30V 0.1A SC88/SC70-6

Supplier's Site Datasheet
Bipolar Transistor Arrays - BC848CDW1T1GOSDKR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
BC848CDW1T1GOSDKR-ND
Bipolar Transistor Arrays BC848CDW1T1GOSDKR-ND
Bipolar (BJT) Transistor Array 2 NPN (Dual) 30V 100mA 100MHz 380mW Surface Mount SC-88/SC70-6/SOT-363

Bipolar (BJT) Transistor Array 2 NPN (Dual) 30V 100mA 100MHz 380mW Surface Mount SC-88/SC70-6/SOT-363

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Bipolar Transistor Arrays - BC848CDW1T1GOSCT-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
BC848CDW1T1GOSCT-ND
Bipolar Transistor Arrays BC848CDW1T1GOSCT-ND
Bipolar (BJT) Transistor Array 2 NPN (Dual) 30V 100mA 100MHz 380mW Surface Mount SC-88/SC70-6/SOT-363

Bipolar (BJT) Transistor Array 2 NPN (Dual) 30V 100mA 100MHz 380mW Surface Mount SC-88/SC70-6/SOT-363

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Bipolar Transistor Arrays - BC848CDW1T1GOSTR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
BC848CDW1T1GOSTR-ND
Bipolar Transistor Arrays BC848CDW1T1GOSTR-ND
Bipolar (BJT) Transistor Array 2 NPN (Dual) 30V 100mA 100MHz 380mW Surface Mount SC-88/SC70-6/SOT-363

Bipolar (BJT) Transistor Array 2 NPN (Dual) 30V 100mA 100MHz 380mW Surface Mount SC-88/SC70-6/SOT-363

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TRANSISTORS - Transistors (BJT) - Arrays - BC848CDW1T1G - 011135-BC848CDW1T1G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays - BC848CDW1T1G
011135-BC848CDW1T1G
TRANSISTORS - Transistors (BJT) - Arrays - BC848CDW1T1G 011135-BC848CDW1T1G
Manufacturer: ON Semiconductor Win Source Part Number: 011135-BC848CDW1T1G Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 100MHz Transistor Polarity: 2 NPN (Dual) Family Name: BC848CDW1 Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-88/SC70-6/SOT-363 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 30V Max Vce (sat): 600mV @ 5mA, 100mA Collector Cut-off Current(Max): 15nA (ICBO) Typical Gain (hFE) (Min): 420 @ 2mA, 5V Maximum Power Dissipation: 380mW Alternative Parts (Cross-Reference): BC848BDW1T1; BC 847C B5003XT; BC847CGEG; BC 847C B5000XT; Introduction Date: May 25, 2000 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2026 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Sufficient

Manufacturer: ON Semiconductor
Win Source Part Number: 011135-BC848CDW1T1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 100MHz
Transistor Polarity: 2 NPN (Dual)
Family Name: BC848CDW1
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-88/SC70-6/SOT-363
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 30V
Max Vce (sat): 600mV @ 5mA, 100mA
Collector Cut-off Current(Max): 15nA (ICBO)
Typical Gain (hFE) (Min): 420 @ 2mA, 5V
Maximum Power Dissipation: 380mW
Alternative Parts (Cross-Reference): BC848BDW1T1; BC 847C B5003XT; BC847CGEG; BC 847C B5000XT;
Introduction Date: May 25, 2000
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2026
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Sufficient

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Singapore
Dual 30V 100mA 100MHz Bipolar Transistor
277-BC848CDW1T1G
Dual 30V 100mA 100MHz Bipolar Transistor 277-BC848CDW1T1G
Dual NPN BJT, 30V, 100mA, 100MHz, SOT-363-6 Product overview: BC848CDW1T1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 30V, 100mA, 100MHz. Search-friendly keywords include transistor, BJT, switching, amplification, Dual, 30V, 100mA, 100MHz, Bipolar Transistor, Bipolar Transistor Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 277-BC848CDW1T1G can be used for catalog matching and distributor lookup.

Dual NPN BJT, 30V, 100mA, 100MHz, SOT-363-6 Product overview: BC848CDW1T1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 30V, 100mA, 100MHz. Search-friendly keywords include transistor, BJT, switching, amplification, Dual, 30V, 100mA, 100MHz, Bipolar Transistor, Bipolar Transistor Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 277-BC848CDW1T1G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Bipolar Transistor, Npn, 30V, Full Reel; Transistor Polarity Onsemi - 26K3469 - Newark, An Avnet Company
Chicago, IL, United States
Bipolar Transistor, Npn, 30V, Full Reel; Transistor Polarity Onsemi
26K3469
Bipolar Transistor, Npn, 30V, Full Reel; Transistor Polarity Onsemi 26K3469
BIPOLAR TRANSISTOR, NPN, 30V, FULL REEL; Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:30V; DC Collector Current:100mA; Power Dissipation Pd:380mW; DC Current Gain hFE:420hFE; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes

BIPOLAR TRANSISTOR, NPN, 30V, FULL REEL; Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:30V; DC Collector Current:100mA; Power Dissipation Pd:380mW; DC Current Gain hFE:420hFE; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes

Supplier's Site Datasheet
Transistor Array, Aec-Q101, Dual Npn, 30V; Transistor Polarity Onsemi - 13AC6085 - Newark, An Avnet Company
Chicago, IL, United States
Transistor Array, Aec-Q101, Dual Npn, 30V; Transistor Polarity Onsemi
13AC6085
Transistor Array, Aec-Q101, Dual Npn, 30V; Transistor Polarity Onsemi 13AC6085
TRANSISTOR ARRAY, AEC-Q101, DUAL NPN, 30V; Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:30V; DC Collector Current:100mA; Power Dissipation Pd:380mW; DC Current Gain hFE:420hFE; No. of Pins:6Pins; Product Range:- RoHS Compliant: Yes

TRANSISTOR ARRAY, AEC-Q101, DUAL NPN, 30V; Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:30V; DC Collector Current:100mA; Power Dissipation Pd:380mW; DC Current Gain hFE:420hFE; No. of Pins:6Pins; Product Range:- RoHS Compliant: Yes

Supplier's Site
Transistor Array, Aec-Q101, Dual Npn, 30V; Transistor Polarity Onsemi - 13AC3352 - Newark, An Avnet Company
Chicago, IL, United States
Transistor Array, Aec-Q101, Dual Npn, 30V; Transistor Polarity Onsemi
13AC3352
Transistor Array, Aec-Q101, Dual Npn, 30V; Transistor Polarity Onsemi 13AC3352
TRANSISTOR ARRAY, AEC-Q101, DUAL NPN, 30V; Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:30V; Power Dissipation Pd:380mW; DC Collector Current:100mA; DC Current Gain hFE:420hFE; Transistor Case Style:SOT-363 RoHS Compliant: Yes

TRANSISTOR ARRAY, AEC-Q101, DUAL NPN, 30V; Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:30V; Power Dissipation Pd:380mW; DC Collector Current:100mA; DC Current Gain hFE:420hFE; Transistor Case Style:SOT-363 RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BC848CDW1T1G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
BC848CDW1T1G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) BC848CDW1T1G
TRANS 2NPN 30V 0.1A SC88/SC70-6

TRANS 2NPN 30V 0.1A SC88/SC70-6

Supplier's Site
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
BC848CDW1T1G
Bipolar Transistors - BJT BC848CDW1T1G
Bipolar Transistors - BJT 100mA 30V Dual NPN

Bipolar Transistors - BJT 100mA 30V Dual NPN

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Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company Newark, An Avnet Company Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number BC848CDW1T1G BC848CDW1T1GOSDKR-ND 011135-BC848CDW1T1G 277-BC848CDW1T1G 26K3469 13AC6085 13AC3352 BC848CDW1T1G BC848CDW1T1G
Product Name Bipolar Transistor Arrays Bipolar Transistor Arrays TRANSISTORS - Transistors (BJT) - Arrays - BC848CDW1T1G Dual 30V 100mA 100MHz Bipolar Transistor Bipolar Transistor, Npn, 30V, Full Reel; Transistor Polarity Onsemi Transistor Array, Aec-Q101, Dual Npn, 30V; Transistor Polarity Onsemi Transistor Array, Aec-Q101, Dual Npn, 30V; Transistor Polarity Onsemi Discrete Semiconductor Products - Transistors - Bipolar (BJT) Bipolar Transistors - BJT
Polarity 2 NPN (Dual); NPN NPN 2 NPN (Dual); NPN NPN NPN NPN NPN
Package Type 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 SOT3; SC-88/SC70-6/SOT-363 TO-3 TO-3 TO-3; SOT3
IC(max) 100 milliamps 100 milliamps 100 milliamps 100 milliamps 100 milliamps
VCEO 30 volts 30 volts 30 volts 30 volts
Operating Frequency 100 MHz 100 MHz
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