onsemi Single Bipolar Transistors BC848BMTF

Description
Bipolar (BJT) Transistor NPN 30V 100mA 300MHz 310mW Surface Mount SOT-23-3
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor NPN 30V 100mA 300MHz 310mW Surface Mount SOT-23-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - BC848BMTFTR-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
BC848BMTFTR-ND
Single Bipolar Transistors BC848BMTFTR-ND
Bipolar (BJT) Transistor NPN 30V 100mA 300MHz 310mW Surface Mount SOT-23-3

Bipolar (BJT) Transistor NPN 30V 100mA 300MHz 310mW Surface Mount SOT-23-3

Buy Now Datasheet
 - BC848BMTF - Rochester Electronics
Newburyport, MA, United States
NPN Epitaxial Silicon Transistor

NPN Epitaxial Silicon Transistor

Supplier's Site Datasheet
 - BC848BMTF - Rochester Electronics
Newburyport, MA, United States
NPN Epitaxial Silicon Transistor

NPN Epitaxial Silicon Transistor

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single - BC848BMTF - 011132-BC848BMTF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - BC848BMTF
011132-BC848BMTF
TRANSISTORS - Transistors (BJT) - Single - BC848BMTF 011132-BC848BMTF
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 011132-BC848BMTF Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 300MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-23-3 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 30V Max Vce (sat): 600mV @ 5mA, 100mA Collector Cut-off Current(Max): 15nA (ICBO) Typical Gain (hFE) (Min): 200 @ 2mA, 5V Maximum Power Dissipation: 310mW Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Sufficient Quantity per package: 3k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 011132-BC848BMTF
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 300MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: SOT-23-3
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 30V
Max Vce (sat): 600mV @ 5mA, 100mA
Collector Cut-off Current(Max): 15nA (ICBO)
Typical Gain (hFE) (Min): 200 @ 2mA, 5V
Maximum Power Dissipation: 310mW
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Sufficient
Quantity per package: 3k pcs

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BC848BMTF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
BC848BMTF
Discrete Semiconductor Products - Transistors - Bipolar (BJT) BC848BMTF
TRANS NPN 30V 0.1A SOT23-3

TRANS NPN 30V 0.1A SOT23-3

Supplier's Site

Technical Specifications

  DigiKey Rochester Electronics Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors RF Transistors Transistors Bipolar RF Transistors
Product Number BC848BMTFTR-ND BC848BMTF 011132-BC848BMTF BC848BMTF
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - BC848BMTF Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN NPN; NPN
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