The BC847CLT1G is a general-purpose NPN silicon transistor designed for various applications, including industrial and automotive uses. It features a maximum collector-emitter voltage (VCEO) of 45V and a maximum collector current of 100mA, making it suitable for low to moderate power applications. The transistor has a typical DC current gain (hFE) of 420 at 2mA and 5V, indicating good amplification capabilities. This device is housed in a compact SOT-23 package, which is suitable for surface mount technology (SMT). It operates over a wide temperature range of -55¬8C to +150¬8C, ensuring reliability in diverse environmental conditions. The BC847CLT1G is also RoHS compliant and free from halogens, making it a suitable choice for environmentally conscious designs. With a maximum power dissipation of 300mW, it is capable of handling moderate thermal loads. Engineers considering this transistor should note its low collector cut-off current of 15nA, which contributes to its efficiency in low-power applications. Overall, the BC847CLT1G is a versatile component for various electronic designs requiring reliable switching and amplification.
NPN Bipolar Transistor
Manufacturer: ON Semiconductor
Win Source Part Number: 011124-BC847CLT1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 100MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 45V
Max Vce (sat): 600mV @ 5mA, 100mA
Collector Cut-off Current(Max): 15nA (ICBO)
Typical Gain (hFE) (Min): 420 @ 2mA, 5V
Maximum Power Dissipation: 300mW
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial, Power Management, Automotive
NPN BJT, 45V VCEO, 100mA IC, 100MHz, SOT-23 Product overview: BC847CLT1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 45V, 100mA, 100MHz, SOT-23. Search-friendly keywords include transistor, BJT, switching, amplification, 45V, 100mA, 100MHz, SOT-23, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-BC847CLT1G can be used for catalog matching and distributor lookup.
TRANS NPN 45V 0.1A SOT23-3
Bipolar (BJT) Transistor NPN 45V 100mA 100MHz 300mW Surface Mount SOT-23-3 (TO-236)
Bipolar (BJT) Transistor NPN 45V 100mA 100MHz 300mW Surface Mount SOT-23-3 (TO-236)
Bipolar (BJT) Transistor NPN 45V 100mA 100MHz 300mW Surface Mount SOT-23-3 (TO-236)
TRANS NPN 45V 0.1A SOT23-3
Bipolar Transistors - BJT 100mA 50V NPN
45V 300mW 420@2mA,5V 100mA NPN SOT-23 Bipolar Transistors - BJT ROHS
BIPOLAR TRANSISTOR, NPN, 45V SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage Max:45V; Continuous Collector Current:100mA; Power Dissipation:300mW; Transistor Mounting:Surface Mount; No. of Pins:3Pins; MSL:MSL 1 - UnlimitedRoHS Compliant: Yes
Bipolar (BJT) Single Transistor, General Purpose, NPN, 45 V, 100 MHz, 300 mW, 100 mA, 100 RoHS Compliant: Yes
Bipolar (BJT) Single Transistor, General Purpose, NPN, 45 V, 100 MHz, 300 mW, 100 mA, 420 RoHS Compliant: Yes
BIPOLAR TRANSISTOR, NPN, 45V SOT-23, FULL REEL; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; DC Collector Current:100mA; Power Dissipation Pd:300mW; Transistor Mounting:Surface Mount; No. of Pins:3Pins RoHS Compliant: Yes
| Rochester Electronics | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | LCSC Electronics Technology (HK) Limited | Newark, An Avnet Company | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Bipolar RF Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | BC847CLT1G | 011124-BC847CLT1G | 276-BC847CLT1G | BC847CLT1G | BC847CLT1GOSDKR-ND | BC847CLT1G | BC847CLT1G | BC847CLT1G | 88H4569 | 58M4031 | 85W3117 |
| Product Name | TRANSISTORS - Transistors (BJT) - Single - BC847CLT1G | 45V 100mA 100MHz SOT-23 Bipolar Transistor | Single Bipolar Transistors | Single Bipolar Transistors | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Bipolar Transistors - BJT | Triode/MOS Tube/Transistor >> Bipolar Transistors - BJT | Bipolar Transistor, Npn, 45V Sot-23; Transistor Polarity Onsemi | Bipolar (Bjt) Single Transistor, General Purpose, Npn, 45 V, 100 Mhz, 300 Mw, 100 Ma, 100 Rohs Compliant Onsemi | Bipolar Transistor, Npn, 45V Sot-23, Full Reel; Transistor Polarity Onsemi | |
| Polarity | NPN | NPN; NPN | NPN | NPN; NPN | NPN | NPN | NPN | NPN | NPN | ||
| Package Type | SOT23; SOT-23 (TO-236) 3 LEAD | SOT3; SOT23; SOT-23-3 (TO-236) | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT23 | TO-3; SOT23 | TO-3 | TO-3; SOT23 | |||
| Packing Method | Tape Reel; Tape & Reel | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR | |||||||||
| IC(max) | 100 milliamps | 100 milliamps | 100 milliamps | 100 milliamps | 100 milliamps | 100 milliamps | |||||
| VCEO | 45 volts | 45 volts | 45 volts | 45 volts | 45 volts |
