The BC847CDXV6T1G is a dual NPN bipolar transistor designed for general-purpose amplifier applications. It features a maximum collector-emitter voltage of 45V and a continuous collector current rating of 100mA. The device is housed in a compact SOT-563 package, suitable for low-power surface mount applications. It is AEC-Q101 qualified, making it suitable for automotive and other applications that require stringent quality standards. The transistor is RoHS compliant and Pb-free, ensuring it meets environmental regulations. With a DC current gain (hFE) ranging from 420 to 800, it offers good amplification characteristics. The maximum power dissipation is rated at 500mW, with a thermal resistance of 250°C/W when both junctions are heated. The operating temperature range is from -55°C to +150°C, providing versatility for various applications.
NPN BJT Transistor, 45V, 100mA, 100MHz, SOT-563-6 Product overview: BC847CDXV6T1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 45V, 100mA, 100MHz. Search-friendly keywords include transistor, BJT, switching, amplification, 45V, 100mA, 100MHz, Bipolar Transistor, Bipolar Transistor Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 277-BC847CDXV6T1G can be used for catalog matching and distributor lookup.
Bipolar (BJT) Transistor Array 2 NPN (Dual) 45V 100mA 100MHz 500mW Surface Mount SOT-563
Bipolar (BJT) Transistor Array 2 NPN (Dual) 45V 100mA 100MHz 500mW Surface Mount SOT-563
Bipolar (BJT) Transistor Array 2 NPN (Dual) 45V 100mA 100MHz 500mW Surface Mount SOT-563
Manufacturer: ON Semiconductor
Win Source Part Number: 011123-BC847CDXV6T1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 100MHz
Transistor Polarity: 2 NPN (Dual)
Family Name: BC847CDXV6
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-563
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 45V
Max Vce (sat): 600mV @ 5mA, 100mA
Collector Cut-off Current(Max): 15nA (ICBO)
Typical Gain (hFE) (Min): 420 @ 2mA, 5V
Maximum Power Dissipation: 500mW
Alternative Parts (Cross-Reference): BC847BV-TP; BC847BV-7-F; BC847BV-7;
Introduction Date: March 13, 2003
ECCN: EAR99
Country of Origin: China, Morocco
Estimated EOL Date: 2023
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Balance
TRANS 2NPN 45V 0.1A SOT563
TRANS 2NPN 45V 0.1A SOT563
BIPOLAR TRANSISTOR, NPN, DUAL, 45V, SOT563; Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:45V; DC Collector Current:100mA; Power Dissipation Pd:500mW; DC Current Gain hFE:420hFE; No. of Pins:6Pins; Product Range:- RoHS Compliant: Yes
BIPOLAR TRANSISTOR, NPN, DUAL, 45V, SOT563, FULL REEL; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; DC Collector Current:100mA; Power Dissipation Pd:357mW; DC Current Gain hFE:520hFE; No. of Pins:6Pins RoHS Compliant: Yes
TRANSISTOR, BIPOL, NPN, 45V; Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:45V; Power Dissipation Pd:500mW; DC Collector Current:100mA; DC Current Gain hFE:420hFE; Transistor Case Style:SOT-563; No. of Pins:6Pins; RoHS Compliant: Yes
TRANS 2NPN 45V 0.1A SOT563
Bipolar Transistors - BJT 100mA 50V Dual NPN
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | Newark, An Avnet Company | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Bipolar RF Transistors | Transistors | Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | 277-BC847CDXV6T1G | BC847CDXV6T1GOSCT-ND | 011123-BC847CDXV6T1G | 598-BC847CDXV6T1G | BC847CDXV6T1G | 09R9379 | 41K9607 | 81Y5869 | BC847CDXV6T1G | BC847CDXV6T1G |
| Product Name | 45V 100mA 100MHz Bipolar Transistor | Bipolar Transistor Arrays | TRANSISTORS - Transistors (BJT) - Arrays - BC847CDXV6T1G | TRANS 2NPN 45V 0.1A SOT563 | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Bipolar Transistor, Npn, Dual, 45V, Sot563; Transistor Polarity Onsemi | Bipolar Transistor, Npn, Dual, 45V, Sot563, Full Reel; Transistor Polarity Onsemi | Transistor, Bipol, Npn, 45V; Transistor Polarity Onsemi | Bipolar Transistor Arrays | Bipolar Transistors - BJT |
| Polarity | NPN | NPN | NPN; 2 NPN (Dual) | NPN; NPN | NPN | NPN | NPN | 2 NPN (Dual); NPN | ||
| IC(max) | 100 milliamps | 100 milliamps | 100 milliamps | 100 milliamps | 100 milliamps | |||||
| VCEO | 45 volts | 45 volts | 45 volts | |||||||
| VCBO | 50 volts | |||||||||
| fT | 100 MHz |
