onsemi TRANSISTORS - Transistors (BJT) - Arrays - BC847BPDXV6T1G BC847BPDXV6T1G

Description
Manufacturer: ON Semiconductor Win Source Part Number: 111698-BC847BPDXV6T1 G Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 100MHz Transistor Polarity: NPN, PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-563 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 45V Max Vce (sat): 600mV @ 5mA, 100mA Collector Cut-off Current(Max): 15nA (ICBO) Typical Gain (hFE) (Min): 200 @ 2mA, 5V Maximum Power Dissipation: 357mW Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Limited
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 111698-BC847BPDXV6T1 G Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 100MHz Transistor Polarity: NPN, PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-563 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 45V Max Vce (sat): 600mV @ 5mA, 100mA Collector Cut-off Current(Max): 15nA (ICBO) Typical Gain (hFE) (Min): 200 @ 2mA, 5V Maximum Power Dissipation: 357mW Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Limited
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TRANSISTORS - Transistors (BJT) - Arrays - BC847BPDXV6T1G - 111698-BC847BPDXV6T1G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays - BC847BPDXV6T1G
111698-BC847BPDXV6T1G
TRANSISTORS - Transistors (BJT) - Arrays - BC847BPDXV6T1G 111698-BC847BPDXV6T1G
Manufacturer: ON Semiconductor Win Source Part Number: 111698-BC847BPDXV6T1 G Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 100MHz Transistor Polarity: NPN, PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-563 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 45V Max Vce (sat): 600mV @ 5mA, 100mA Collector Cut-off Current(Max): 15nA (ICBO) Typical Gain (hFE) (Min): 200 @ 2mA, 5V Maximum Power Dissipation: 357mW Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Limited

Manufacturer: ON Semiconductor
Win Source Part Number: 111698-BC847BPDXV6T1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 100MHz
Transistor Polarity: NPN, PNP
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-563
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 45V
Max Vce (sat): 600mV @ 5mA, 100mA
Collector Cut-off Current(Max): 15nA (ICBO)
Typical Gain (hFE) (Min): 200 @ 2mA, 5V
Maximum Power Dissipation: 357mW
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Limited

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Technical Specifications

  Win Source Electronics
Product Category Logic Level Translators
Product Number 111698-BC847BPDXV6T1G
Product Name TRANSISTORS - Transistors (BJT) - Arrays - BC847BPDXV6T1G
Operating Temperature -55 to 150 C (-67 to 302 F)
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