onsemi BC847A

Description
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon
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Description
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon
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Datasheet
Datasheet Summary
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NPN silicon transistor for switching and amplifier applications in a SOT-23 package, with a collector current rating of 100 mA, a collector-emitter voltage of 45 V, and a collector power dissipation of 310 mW. It features a DC current gain (hFE) range of 110 to 220 for the A bin, a collector-emitter saturation voltage of 90 to 250 mV at 10 mA collector current and 0.5 mA base current, and a current gain bandwidth product of 300 MHz. Noise figure is specified up to 10 dB for the BC847 variant.

Datasheet Summary
Powered by GS/AI

NPN silicon transistor for switching and amplifier applications in a SOT-23 package, with a collector current rating of 100 mA, a collector-emitter voltage of 45 V, and a collector power dissipation of 310 mW. It features a DC current gain (hFE) range of 110 to 220 for the A bin, a collector-emitter saturation voltage of 90 to 250 mV at 10 mA collector current and 0.5 mA base current, and a current gain bandwidth product of 300 MHz. Noise figure is specified up to 10 dB for the BC847 variant.

Suppliers

Company
Product
Description
Supplier Links
 - BC847A - Rochester Electronics
Newburyport, MA, United States
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon

Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Bipolar RF Transistors
Product Number BC847A
Polarity NPN
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