The BC846BPDW1T1 is a dual general-purpose bipolar transistor in a SOT-363 package measuring 2.00 x 1.25 x 0.90 mm, featuring complementary NPN and PNP transistors for surface-mount applications. It has a collector-emitter voltage rating of 65 V, continuous collector current of 100 mA, and a maximum junction temperature of 150 °C. The device is AEC-Q101 qualified, RoHS compliant, and Pb-free. Its current gain (hFE) ranges from 200 to 475 at IC = 2.0 mA and VCE = 5.0 V, with a collector-emitter saturation voltage of 0.25 V at IC = 10 mA and IB = 0.5 mA. The current gain-bandwidth product is 100 MHz.
TRANS NPN/PNP DUAL 65V SOT-363 / Bipolar (BJT) Transistor Array Product overview: BC846BPDW1T1 from ON Semiconductor is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 65V. Search-friendly keywords include transistor, BJT, switching, amplification, Dual, 65V, Bipolar Transistor, Bipolar Transistor Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 277-BC846BPDW1T1 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 277-BC846BPDW1T1 |
| Product Name | Dual 65V Bipolar Transistor |
| Package Type | Bulk |
