The BC846BDW1T1G is a dual NPN bipolar transistor in a SOT-363 package, designed for general-purpose amplifier applications. It has a collector-emitter voltage rating of 65 V, a continuous collector current of 100 mA, and a total device power dissipation of 380 mW. The device is housed in a 6-pin surface-mount package measuring 2.0 mm × 1.25 mm × 1.10 mm. It is AEC-Q101 qualified and PPAP capable, with Pb-free, halogen-free, and RoHS-compliant construction. The DC current gain (hFE) ranges from 200 to 450 at IC = 2.0 mA and VCE = 5.0 V. Operating junction and storage temperatures range from -55°C to +150°C.
BIPOLAR TRANSISTOR, NPN, DUAL, 65V, SOT363, FULL REEL; Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:65V; DC Collector Current:100mA; Power Dissipation Pd:380mW; DC Current Gain hFE:290hFE; No. of Pins:6Pins RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 25AC6300 |
| Product Name | Bipolar Transistor, Npn, Dual, 65V, Sot363, Full Reel; Transistor Polarity Onsemi |
| Polarity | NPN |
