The BC846BDW1T1 is a dual NPN bipolar transistor in a SOT-363 surface-mount package, designed for general-purpose amplifier and switching applications. It has a collector-emitter voltage rating of 65 V, a continuous collector current of 100 mA, and a total device power dissipation of 380 mW. The junction temperature range is -55°C to +150°C. The device is Pb-free, halogen-free, RoHS compliant, AEC-Q101 qualified, and PPAP capable. Its thermal resistance from junction to ambient is 328°C/W. The transistor features a minimum DC current gain of 200 at 2.0 mA collector current and 5 V collector-emitter voltage, with a collector-emitter saturation voltage of up to 0.25 V at 10 mA collector current and 0.5 mA base current. The current gain-bandwidth product is 100 MHz.
TRANS NPN DUAL 65V 100MA SOT-363 / Bipolar (BJT) Transistor Array Product overview: BC846BDW1T1 from ON Semiconductor is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 65V, 100MA. Search-friendly keywords include transistor, BJT, switching, amplification, Dual, 65V, 100MA, Bipolar Transistor, Bipolar Transistor Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 277-BC846BDW1T1 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 277-BC846BDW1T1 |
| Product Name | Dual 65V 100MA Bipolar Transistor |
| Package Type | Bulk |
