NPN silicon transistor for switching and amplifier applications in a SOT-23 package, measuring 2.90 mm × 1.90 mm × 1.14 mm, with a collector current rating of 100 mA, collector-emitter voltage of 65 V, and power dissipation of 310 mW. Features a DC current gain (hFE) range of 110 to 220 for the A classification, collector-emitter saturation voltage of 90 to 250 mV at 10 mA collector and 0.5 mA base current, and a current gain bandwidth product of 300 MHz. Complies with AEC-Q200 and is rated for a junction temperature up to 150 °C.
Small Signal Bipolar Transistor, 0.1A, 65V, NPN
| Rochester Electronics | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | BC846A |
| Polarity | NPN |
