onsemi BC807-40LT1

PNP silicon general purpose transistor in SOT-23 package for switching and amplification applications, with a continuous collector current of -500 mA, collector-emitter voltage rating of -45 V, and DC current gain (hFE) ranging from 250 to 600 at -100 mA collector current. Junction and storage temperature range is -55°C to +150°C. The device meets RoHS compliance and is available in Pb-free packaging. Thermal resistance is 556 °C/W on FR-5 board and 417 °C/W on alumina substrate. Current-gain bandwidth product is 100 MHz.