The BC807-25LT1G is a PNP silicon general-purpose transistor in a SOT-23 package, rated for a maximum collector-emitter voltage of -45 V and a continuous collector current of -500 mA. It has a total device dissipation of 300 mW on an alumina substrate, with a thermal resistance of 417 °C/W. The device features a DC current gain (hFE) range of 160 to 400 at -100 mA collector current and -1.0 V collector-emitter voltage, and a collector-emitter saturation voltage of -0.7 V at -500 mA collector current and -50 mA base current. It is AEC-Q101 qualified and PPAP capable, RoHS compliant, and Pb-free with a junction temperature range of -55 °C to +150 °C.
BIPOLAR TRANSISTOR, PNP, -45V, SOT-23, FULL REEL; Transistor Polarity:PNP; Collector Emitter Voltage Max:45V; Continuous Collector Current:500mA; Power Dissipation:300mW; Transistor Mounting:Surface Mount; No. of Pins:3Pins RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 25AC6287 |
| Product Name | Bipolar Transistor, Pnp, -45V, Sot-23, Full Reel; Transistor Polarity Onsemi |
| Polarity | PNP |