onsemi TRANSISTORS - Transistors (BJT) - Single - BC639G BC639G

Manufacturer: ON Semiconductor
Win Source Part Number: 803159-BC639G
Packaging: Bulk
Mounting Style: Through Hole
Power - Max: 625mW
Transistor Type: NPN
Frequency - Transition: 200MHz
Part Status: Obsolete (End Of Life)
Supplier Device Package: TO-92-3
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: TO-226-3, TO-92-3 (TO-226AA)
Current - Collector (Ic) (Maximum): 1A
Voltage - Collector Emitter Breakdown (Maximum): 80V
Current - Collector Cutoff (Maximum): 100nA (ICBO)
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 5,000
MSL Level: 1 (Unlimited)
Vce Saturation (Maximum) at Ib, Ic: 500mV at 50mA, 500mA
Part Number Series: BC639
DC Current Gain (hFE) (Min) at Ic, Vce: 40 at 150mA, 2V

NPN BJT Transistor, 80V, 1A, 200MHz, TO-92 Product overview: BC639G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 1A, 200MHz. Search-friendly keywords include transistor, BJT, switching, amplification, 80V, 1A, 200MHz, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-BC639G can be used for catalog matching and distributor lookup.

Bipolar (BJT) Transistor NPN 80V 1A 200MHz 625mW Through Hole TO-92 (TO-226)