onsemi Single Bipolar Transistors BC638G

Description
Bipolar (BJT) Transistor PNP 60V 500mA 150MHz 625mW Through Hole TO-92 (TO-226)
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor PNP 60V 500mA 150MHz 625mW Through Hole TO-92 (TO-226)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - BC638G-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
BC638G-ND
Single Bipolar Transistors BC638G-ND
Bipolar (BJT) Transistor PNP 60V 500mA 150MHz 625mW Through Hole TO-92 (TO-226)

Bipolar (BJT) Transistor PNP 60V 500mA 150MHz 625mW Through Hole TO-92 (TO-226)

Buy Now Datasheet
 - BC638G - Rochester Electronics
Newburyport, MA, United States
Small Signal Bipolar Transistor, 0.5A, 60V, PNP, TO-92

Small Signal Bipolar Transistor, 0.5A, 60V, PNP, TO-92

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single - BC638G - 1022389-BC638G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - BC638G
1022389-BC638G
TRANSISTORS - Transistors (BJT) - Single - BC638G 1022389-BC638G
Manufacturer: ON Semiconductor Win Source Part Number: 1022389-BC638G Packaging: Bulk Mounting: Through Hole Frequency - Transition: 150MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-92-3 Maximum Current Collector: 500mA VCEO Maximum Collector-Emitter Breakdown Voltage: 60V Max Vce (sat): 500mV @ 50mA, 500mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 40 @ 150mA, 2V Maximum Power Dissipation: 625mW Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Sufficient

Manufacturer: ON Semiconductor
Win Source Part Number: 1022389-BC638G
Packaging: Bulk
Mounting: Through Hole
Frequency - Transition: 150MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-92-3
Maximum Current Collector: 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 60V
Max Vce (sat): 500mV @ 50mA, 500mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 40 @ 150mA, 2V
Maximum Power Dissipation: 625mW
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BC638G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
BC638G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) BC638G
TRANS PNP 60V 0.5A TO92

TRANS PNP 60V 0.5A TO92

Supplier's Site

Technical Specifications

  DigiKey Rochester Electronics Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors
Product Number BC638G-ND BC638G 1022389-BC638G BC638G
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - BC638G Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP PNP PNP; PNP
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