The BC636 is a PNP epitaxial silicon transistor for switching and amplification, in a TO-92 package measuring 4.58 mm in length. It has a collector-emitter voltage rating of -45 V, a continuous collector current of -1 A, and a peak current of -1.5 A. Power dissipation is rated at 1 W with a maximum junction temperature of 150°C. The DC current gain (hFE) ranges from 25 to 250, and the collector-emitter saturation voltage is -0.5 V at -500 mA collector current and -50 mA base current. The current gain bandwidth product is 100 MHz. The BC636TFR variant is one of several package codes for this series, sharing identical electrical characteristics. It meets RoHS standards.
Small Signal Bipolar Transistor, 1A, 45V, PNP, TO-92
| Rochester Electronics | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | BC636TFR |
| Polarity | PNP |
