PNP silicon amplifier transistor for general-purpose applications, packaged in TO-92 case style 17 with dimensions of 4.45 to 5.20 mm in height, 4.32 to 5.33 mm in width, and 6.35 mm in lead length. Maximum collector-emitter voltage is -65 V, collector-base voltage is -80 V, and emitter-base voltage is -5.0 V. Continuous collector current is -100 mA, with a peak current of -200 mA. Total device dissipation is 625 mW at 25°C ambient temperature, derating at 5.0 mW/°C. Thermal resistance from junction to ambient is 200°C/W. High current gain options are available: B-series devices have a minimum hFE of 150 at -10 mA collector current. Operates over a junction temperature range of -55°C to +150°C. Meets RoHS standards.
Small Signal Bipolar Transistor, 0.1A, 65V, PNP, TO-92
| Rochester Electronics | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | BC556BRL1 |
| Polarity | PNP |
