onsemi Single Bipolar Transistors BC517RL1G

Description
Bipolar (BJT) Transistor NPN - Darlington 30V 1A 200MHz 1.5W Through Hole TO-92 (TO-226)
  • Single Bipolar Transistors - BC517RL1GOSTR-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors (BJT) - Single - BC517RL1G - 138951-BC517RL1G - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BC517RL1G - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Bipolar (BJT) Transistor NPN - Darlington 30V 1A 200MHz 1.5W Through Hole TO-92 (TO-226)
Request a Quote Datasheet

Suppliers

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Product
Description
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Single Bipolar Transistors - BC517RL1GOSTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
BC517RL1GOSTR-ND
Single Bipolar Transistors BC517RL1GOSTR-ND
Bipolar (BJT) Transistor NPN - Darlington 30V 1A 200MHz 1.5W Through Hole TO-92 (TO-226)

Bipolar (BJT) Transistor NPN - Darlington 30V 1A 200MHz 1.5W Through Hole TO-92 (TO-226)

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - BC517RL1G - 138951-BC517RL1G - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - BC517RL1G
138951-BC517RL1G
TRANSISTORS - Transistors (BJT) - Single - BC517RL1G 138951-BC517RL1G
Manufacturer: ON Semiconductor Win Source Part Number: 138951-BC517RL1G Packaging: Reel - TR Mounting: Through Hole Frequency - Transition: 200MHz Transistor Polarity: NPN - Darlington Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-92-3 Maximum Current Collector: 1A VCEO Maximum Collector-Emitter Breakdown Voltage: 30V Max Vce (sat): 1V @ 100μA, 100mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 30000 @ 20mA, 2V Maximum Power Dissipation: 1.5W Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Limited

Manufacturer: ON Semiconductor
Win Source Part Number: 138951-BC517RL1G
Packaging: Reel - TR
Mounting: Through Hole
Frequency - Transition: 200MHz
Transistor Polarity: NPN - Darlington
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-92-3
Maximum Current Collector: 1A
VCEO Maximum Collector-Emitter Breakdown Voltage: 30V
Max Vce (sat): 1V @ 100μA, 100mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 30000 @ 20mA, 2V
Maximum Power Dissipation: 1.5W
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BC517RL1G - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
BC517RL1G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) BC517RL1G
TRANS NPN DARL 30V 1A TO92

TRANS NPN DARL 30V 1A TO92

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors
Product Number BC517RL1GOSTR-ND 138951-BC517RL1G BC517RL1G
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - BC517RL1G Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN; NPN - Darlington
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