onsemi Single Bipolar Transistors BC373RL1G

Description
Bipolar (BJT) Transistor NPN - Darlington 80V 1A 200MHz 625mW Through Hole TO-92 (TO-226)
  • Single Bipolar Transistors - BC373RL1GOSTR-ND - DigiKey
    DigiKey
  • Single Bipolar Transistors - BC373RL1G - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • TRANSISTORS - Transistors (BJT) - Single - BC373RL1G - 1022349-BC373RL1G - Win Source Electronics
    Win Source Electronics
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Description
Bipolar (BJT) Transistor NPN - Darlington 80V 1A 200MHz 625mW Through Hole TO-92 (TO-226)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - BC373RL1GOSTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
BC373RL1GOSTR-ND
Single Bipolar Transistors BC373RL1GOSTR-ND
Bipolar (BJT) Transistor NPN - Darlington 80V 1A 200MHz 625mW Through Hole TO-92 (TO-226)

Bipolar (BJT) Transistor NPN - Darlington 80V 1A 200MHz 625mW Through Hole TO-92 (TO-226)

Buy Now Datasheet
Single Bipolar Transistors - BC373RL1G - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single Bipolar Transistors
BC373RL1G
Single Bipolar Transistors BC373RL1G
TRANS NPN DARL 80V 1A TO92

TRANS NPN DARL 80V 1A TO92

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single - BC373RL1G - 1022349-BC373RL1G - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - BC373RL1G
1022349-BC373RL1G
TRANSISTORS - Transistors (BJT) - Single - BC373RL1G 1022349-BC373RL1G
Manufacturer: ON Semiconductor Win Source Part Number: 1022349-BC373RL1G Packaging: Reel - TR Mounting: Through Hole Frequency - Transition: 200MHz Transistor Polarity: NPN - Darlington Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-92-3 Maximum Current Collector: 1A VCEO Maximum Collector-Emitter Breakdown Voltage: 80V Max Vce (sat): 1.1V @ 250μA, 250mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 10000 @ 100mA, 5V Maximum Power Dissipation: 625mW Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 1022349-BC373RL1G
Packaging: Reel - TR
Mounting: Through Hole
Frequency - Transition: 200MHz
Transistor Polarity: NPN - Darlington
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-92-3
Maximum Current Collector: 1A
VCEO Maximum Collector-Emitter Breakdown Voltage: 80V
Max Vce (sat): 1.1V @ 250μA, 250mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 10000 @ 100mA, 5V
Maximum Power Dissipation: 625mW
Popularity: Medium
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Balance

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Technical Specifications

  DigiKey ODG (Origin Data Global) Win Source Electronics
Product Category Transistors Bipolar RF Transistors Transistors
Product Number BC373RL1GOSTR-ND BC373RL1G 1022349-BC373RL1G
Product Name Single Bipolar Transistors Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - BC373RL1G
Polarity NPN NPN - Darlington; NPN NPN; NPN - Darlington
Package Type TO-92; TO-226-3, TO-92-3 Long Body, Formed Leads TO-92; TO-226-3, TO-92-3 Long Body (Formed Leads) TO-92; SOT3; TO-92-3
IC(max) 1000 milliamps
VCEO 80 volts
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