onsemi Single Bipolar Transistors BC373G

Description
Bipolar (BJT) Transistor NPN - Darlington 80V 1A 200MHz 625mW Through Hole TO-92 (TO-226)
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor NPN - Darlington 80V 1A 200MHz 625mW Through Hole TO-92 (TO-226)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - BC373G-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
BC373G-ND
Single Bipolar Transistors BC373G-ND
Bipolar (BJT) Transistor NPN - Darlington 80V 1A 200MHz 625mW Through Hole TO-92 (TO-226)

Bipolar (BJT) Transistor NPN - Darlington 80V 1A 200MHz 625mW Through Hole TO-92 (TO-226)

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - BC373G - 804541-BC373G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - BC373G
804541-BC373G
TRANSISTORS - Transistors (BJT) - Single - BC373G 804541-BC373G
Manufacturer: ON Semiconductor Win Source Part Number: 804541-BC373G Packaging: Bulk Mounting Style: Through Hole Power - Max: 625mW Transistor Type: NPN - Darlington Frequency - Transition: 200MHz Part Status: Obsolete (End Of Life) Supplier Device Package: TO-92-3 Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: TO-226-3, TO-92-3 (TO-226AA) Current - Collector (Ic) (Maximum): 1A Voltage - Collector Emitter Breakdown (Maximum): 80V Current - Collector Cutoff (Maximum): 100nA (ICBO) Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 5,000 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 1.1V at 250μA, 250mA Part Number Series: BC373 DC Current Gain (hFE) (Min) at Ic, Vce: 10000 at 100mA, 5V

Manufacturer: ON Semiconductor
Win Source Part Number: 804541-BC373G
Packaging: Bulk
Mounting Style: Through Hole
Power - Max: 625mW
Transistor Type: NPN - Darlington
Frequency - Transition: 200MHz
Part Status: Obsolete (End Of Life)
Supplier Device Package: TO-92-3
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: TO-226-3, TO-92-3 (TO-226AA)
Current - Collector (Ic) (Maximum): 1A
Voltage - Collector Emitter Breakdown (Maximum): 80V
Current - Collector Cutoff (Maximum): 100nA (ICBO)
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 5,000
MSL Level: 1 (Unlimited)
Vce Saturation (Maximum) at Ib, Ic: 1.1V at 250μA, 250mA
Part Number Series: BC373
DC Current Gain (hFE) (Min) at Ic, Vce: 10000 at 100mA, 5V

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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BC373G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
BC373G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) BC373G
TRANS NPN DARL 80V 1A TO92

TRANS NPN DARL 80V 1A TO92

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors RF Transistors Bipolar RF Transistors
Product Number BC373G-ND 804541-BC373G BC373G
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - BC373G Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN
Package Type TO-92; TO-226-3, TO-92-3 Long Body TO-92; SOT3
Packing Method Bulk; Bulk Bulk; Bulk
TJ -55 to 150 C (-67 to 302 F)
Power Gain 10000 dB
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