onsemi Single Bipolar Transistors BC33825TA

Description
Bipolar (BJT) Transistor NPN 25V 800mA 100MHz 625mW Through Hole TO-92-3
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor NPN 25V 800mA 100MHz 625mW Through Hole TO-92-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - BC33825TATB-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
BC33825TATB-ND
Single Bipolar Transistors BC33825TATB-ND
Bipolar (BJT) Transistor NPN 25V 800mA 100MHz 625mW Through Hole TO-92-3

Bipolar (BJT) Transistor NPN 25V 800mA 100MHz 625mW Through Hole TO-92-3

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - BC33825TA - 119686-BC33825TA - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - BC33825TA
119686-BC33825TA
TRANSISTORS - Transistors (BJT) - Single - BC33825TA 119686-BC33825TA
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 119686-BC33825TA Packaging: AMMO PACKAGE Mounting: Through Hole Frequency - Transition: 100MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-92-3 Maximum Current Collector: 800mA VCEO Maximum Collector-Emitter Breakdown Voltage: 25V Max Vce (sat): 700mV @ 50mA, 500mA Collector Cut-off Current(Max): 100nA Typical Gain (hFE) (Min): 160 @ 100mA, 1V Maximum Power Dissipation: 625mW Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Balance Quantity per package: 2k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 119686-BC33825TA
Packaging: AMMO PACKAGE
Mounting: Through Hole
Frequency - Transition: 100MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-92-3
Maximum Current Collector: 800mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 25V
Max Vce (sat): 700mV @ 50mA, 500mA
Collector Cut-off Current(Max): 100nA
Typical Gain (hFE) (Min): 160 @ 100mA, 1V
Maximum Power Dissipation: 625mW
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Balance
Quantity per package: 2k pcs

Buy Now Datasheet
 - BC33825TA - Rochester Electronics
Newburyport, MA, United States
NPN Bipolar Transistor

NPN Bipolar Transistor

Supplier's Site Datasheet
 - BC33825TA - Rochester Electronics
Newburyport, MA, United States
NPN Bipolar Transistor

NPN Bipolar Transistor

Supplier's Site Datasheet
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
BC33825TA
Bipolar Transistors - BJT BC33825TA
Bipolar Transistors - BJT NPN 25V 800mA HFE/400

Bipolar Transistors - BJT NPN 25V 800mA HFE/400

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BC33825TA - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
BC33825TA
Discrete Semiconductor Products - Transistors - Bipolar (BJT) BC33825TA
TRANS NPN 25V 0.8A TO92-3

TRANS NPN 25V 0.8A TO92-3

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Rochester Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number BC33825TATB-ND 119686-BC33825TA BC33825TA BC33825TA BC33825TA
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - BC33825TA Bipolar Transistors - BJT Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN; NPN NPN
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