onsemi Single Bipolar Transistors BC337-25RL1G

Description
Bipolar (BJT) Transistor NPN 45V 800mA 210MHz 625mW Through Hole TO-92 (TO-226)
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor NPN 45V 800mA 210MHz 625mW Through Hole TO-92 (TO-226)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - BC337-25RL1GOSTR-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
BC337-25RL1GOSTR-ND
Single Bipolar Transistors BC337-25RL1GOSTR-ND
Bipolar (BJT) Transistor NPN 45V 800mA 210MHz 625mW Through Hole TO-92 (TO-226)

Bipolar (BJT) Transistor NPN 45V 800mA 210MHz 625mW Through Hole TO-92 (TO-226)

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - BC337-25RL1G - 125188-BC337-25RL1G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - BC337-25RL1G
125188-BC337-25RL1G
TRANSISTORS - Transistors (BJT) - Single - BC337-25RL1G 125188-BC337-25RL1G
Manufacturer: ON Semiconductor Win Source Part Number: 125188-BC337-25RL1G Packaging: Reel - TR Mounting: Through Hole Frequency - Transition: 210MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-92-3 Maximum Current Collector: 800mA VCEO Maximum Collector-Emitter Breakdown Voltage: 45V Max Vce (sat): 700mV @ 50mA, 500mA Collector Cut-off Current(Max): 100nA Typical Gain (hFE) (Min): 160 @ 100mA, 1V Maximum Power Dissipation: 625mW Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Limited

Manufacturer: ON Semiconductor
Win Source Part Number: 125188-BC337-25RL1G
Packaging: Reel - TR
Mounting: Through Hole
Frequency - Transition: 210MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-92-3
Maximum Current Collector: 800mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 45V
Max Vce (sat): 700mV @ 50mA, 500mA
Collector Cut-off Current(Max): 100nA
Typical Gain (hFE) (Min): 160 @ 100mA, 1V
Maximum Power Dissipation: 625mW
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single Bipolar Transistors - BC337-25RL1G - ODG (Origin Data Global)
Shenzhen, China
Single Bipolar Transistors
BC337-25RL1G
Single Bipolar Transistors BC337-25RL1G
TRANS NPN 45V 0.8A TO92

TRANS NPN 45V 0.8A TO92

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BC337-25RL1G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
BC337-25RL1G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) BC337-25RL1G
TRANS NPN 45V 0.8A TO92

TRANS NPN 45V 0.8A TO92

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number BC337-25RL1GOSTR-ND 125188-BC337-25RL1G BC337-25RL1G BC337-25RL1G
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - BC337-25RL1G Single Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN; NPN NPN; NPN
Package Type TO-92; TO-226-3, TO-92-3 Long Body, Formed Leads TO-92; SOT3; TO-92-3 TO-92; TO-226-3, TO-92-3 Long Body (Formed Leads)
IC(max) 800 milliamps 800 milliamps
VCEO 45 volts 45 volts
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