onsemi Single Bipolar Transistors BC337-025G

Description
Bipolar (BJT) Transistor NPN 45V 800mA 210MHz 625mW Through Hole TO-92 (TO-226)
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor NPN 45V 800mA 210MHz 625mW Through Hole TO-92 (TO-226)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - BC337-025GOS-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
BC337-025GOS-ND
Single Bipolar Transistors BC337-025GOS-ND
Bipolar (BJT) Transistor NPN 45V 800mA 210MHz 625mW Through Hole TO-92 (TO-226)

Bipolar (BJT) Transistor NPN 45V 800mA 210MHz 625mW Through Hole TO-92 (TO-226)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - 1013760-BC337-025G - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single
1013760-BC337-025G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single 1013760-BC337-025G
Win Source Part Number: 1013760-BC337-025G Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Package: Bulk Standard Package: 5,000 Power - Max: 625 mW Voltage - Collector Emitter Breakdown (Max): 45 V Current - Collector (Ic) (Max): 800 mA Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Frequency - Transition: 210MHz Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92 (TO-226) Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 69 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.21.0075 Mfr: onsemi Other Names: BC337-025G-ND,ONSONS BC337-025G,2156-BC33 7-025G-ON,BC337-025G OS,BC337025G Base Product Number: BC337 Product Status: Obsolete

Win Source Part Number: 1013760-BC337-025G
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Package: Bulk
Standard Package: 5,000
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 800 mA
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 210MHz
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92 (TO-226)
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 69 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.21.0075
Mfr: onsemi
Other Names: BC337-025G-ND,ONSONSBC337-025G,2156-BC337-025G-ON,BC337-025GOS,BC337025G
Base Product Number: BC337
Product Status: Obsolete

Buy Now Datasheet
 - BC337-025G - Rochester Electronics
Newburyport, MA, United States
NPN Bipolar Transistor

NPN Bipolar Transistor

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BC337-025G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
BC337-025G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) BC337-025G
TRANS NPN 45V 0.8A TO92

TRANS NPN 45V 0.8A TO92

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Rochester Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number BC337-025GOS-ND 1013760-BC337-025G BC337-025G BC337-025G
Product Name Single Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN NPN
Package Type TO-92; TO-226-3, TO-92-3 Long Body TO-92; SOT3 TO-92; TO-92 (TO-226) 5.33mm Body Height
IC(max) 800 milliamps 800 milliamps
Power Gain 160 dB
Operating Frequency 210 MHz
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