onsemi Single Bipolar Transistors BC32740BU

Description
PNP Bipolar Transistor
Request a Quote Datasheet
Description
PNP Bipolar Transistor
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - BC32740BU - Rochester Electronics
Newburyport, MA, United States
PNP Bipolar Transistor

PNP Bipolar Transistor

Supplier's Site Datasheet
Single Bipolar Transistors - BC32740BUFS-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
BC32740BUFS-ND
Single Bipolar Transistors BC32740BUFS-ND
Bipolar (BJT) Transistor PNP 45V 800mA 100MHz 625mW Through Hole TO-92-3

Bipolar (BJT) Transistor PNP 45V 800mA 100MHz 625mW Through Hole TO-92-3

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TRANSISTORS - Transistors (BJT) - Single - BC32740BU - 110349-BC32740BU - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - BC32740BU
110349-BC32740BU
TRANSISTORS - Transistors (BJT) - Single - BC32740BU 110349-BC32740BU
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 110349-BC32740BU Packaging: Bulk Mounting: Through Hole Frequency - Transition: 100MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-92-3 Maximum Current Collector: 800mA VCEO Maximum Collector-Emitter Breakdown Voltage: 45V Max Vce (sat): 700mV @ 50mA, 500mA Collector Cut-off Current(Max): 100nA Typical Gain (hFE) (Min): 250 @ 100mA, 1V Maximum Power Dissipation: 625mW Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 110349-BC32740BU
Packaging: Bulk
Mounting: Through Hole
Frequency - Transition: 100MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-92-3
Maximum Current Collector: 800mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 45V
Max Vce (sat): 700mV @ 50mA, 500mA
Collector Cut-off Current(Max): 100nA
Typical Gain (hFE) (Min): 250 @ 100mA, 1V
Maximum Power Dissipation: 625mW
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Bipolar Transistors - 7619819 - RS Components, Ltd.
Corby, Northants, United Kingdom
Bipolar Transistors
7619819
Bipolar Transistors 7619819
Transistor GP PNP 45V 0.8A TO92

Transistor GP PNP 45V 0.8A TO92

Supplier's Site
Bipolar Transistors - 7619819P - RS Components, Ltd.
Corby, Northants, United Kingdom
Bipolar Transistors
7619819P
Bipolar Transistors 7619819P
Transistor GP PNP 45V 0.8A TO92

Transistor GP PNP 45V 0.8A TO92

Supplier's Site
Bipolar Transistors - 1241365 - RS Components, Ltd.
Corby, Northants, United Kingdom
Bipolar Transistors
1241365
Bipolar Transistors 1241365
Transistor GP PNP 45V 0.8A TO92

Transistor GP PNP 45V 0.8A TO92

Supplier's Site
Bipolar Transistor 2087-BC32740BU
Bipolar Transistors - BJT TO-92 PNP GP AMP HFE/250-630 Product overview: BC32740BU from Fairchild (onsemi) is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Bipolar (BJT). This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2087-BC32740BU can be used for catalog matching and distributor lookup.

Bipolar Transistors - BJT TO-92 PNP GP AMP HFE/250-630 Product overview: BC32740BU from Fairchild (onsemi) is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Bipolar (BJT). This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2087-BC32740BU can be used for catalog matching and distributor lookup.

Supplier's Site
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BC32740BU - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
BC32740BU
Discrete Semiconductor Products - Transistors - Bipolar (BJT) BC32740BU
TRANS PNP 45V 0.8A TO92-3

TRANS PNP 45V 0.8A TO92-3

Supplier's Site
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
BC32740BU
Bipolar Transistors - BJT BC32740BU
Bipolar Transistors - BJT TO-92 PNP GP AMP

Bipolar Transistors - BJT TO-92 PNP GP AMP

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Technical Specifications

  Rochester Electronics DigiKey Win Source Electronics RS Components, Ltd. RS Components, Ltd. ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number BC32740BU BC32740BUFS-ND 110349-BC32740BU 7619819 7619819P 2087-BC32740BU BC32740BU BC32740BU
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - BC32740BU Bipolar Transistors Bipolar Transistors Bipolar Transistor Discrete Semiconductor Products - Transistors - Bipolar (BJT) Bipolar Transistors - BJT
Polarity PNP PNP PNP; PNP PNP PNP PNP
Package Type TO-92; TO-92-3 TO-92; TO-226-3, TO-92-3 (TO-226AA) TO-92; SOT3; TO-92-3 TO-92; To-92 TO-92; TO-92 Bulk
Packing Method Bulk; Bulk Bulk Bulk; Bulk
Number of units in IC 1
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