onsemi TRANSISTORS - Transistors (BJT) - Single - BC327-025G BC327-025G

Manufacturer: ON Semiconductor
Win Source Part Number: 200422-BC327-025G
Packaging: Bulk
Mounting: Through Hole
Frequency - Transition: 260MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-92-3
Maximum Current Collector: 800mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 45V
Max Vce (sat): 700mV @ 50mA, 500mA
Collector Cut-off Current(Max): 100nA
Typical Gain (hFE) (Min): 160 @ 100mA, 1V
Maximum Power Dissipation: 625mW
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Balance
Application Field: Used in Automotive, Industrial

PNP Bipolar Transistor

Bipolar (BJT) Transistor PNP 45V 800mA 260MHz 625mW Through Hole TO-92 (TO-226)

PNP BJT Transistor, TO-92, 45V VCEO, 800mA IC, 260MHz fT Product overview: BC327-025G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 45V, 800mA, 260MHz. Search-friendly keywords include transistor, BJT, switching, amplification, 45V, 800mA, 260MHz, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-BC327-025G can be used for catalog matching and distributor lookup.