onsemi Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single BC238BRL1

The BC238BRL1 is an NPN silicon bipolar junction transistor for amplification applications, housed in a TO-92 (TO-226AA) package. It shares the maximum collector-emitter voltage rating of 25 Vdc and continuous collector current of 100 mA with the BC238 series. The device dissipates up to 350 mW at 25°C ambient temperature, derating at 2.8 mW/°C, and operates from -55°C to +150°C. Its DC current gain (hFE) ranges from 200 to 460 when measured at IC = 2.0 mA and VCE = 5.0 V. The collector-emitter saturation voltage is specified at up to 0.8 V under IC = 100 mA and IB = 5.0 mA conditions. The current-gain-bandwidth product exceeds 240 MHz at IC = 10 mA and VCE = 5.0 V. Thermal resistance from junction to ambient is 357 °C/W.