onsemi Single Bipolar Transistors BC182L_D27Z

Description
Bipolar (BJT) Transistor NPN 50V 100mA 150MHz 350mW Through Hole TO-92-3
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor NPN 50V 100mA 150MHz 350mW Through Hole TO-92-3
Request a Quote Datasheet

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Product
Description
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Single Bipolar Transistors - BC182L_D27Z-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
BC182L_D27Z-ND
Single Bipolar Transistors BC182L_D27Z-ND
Bipolar (BJT) Transistor NPN 50V 100mA 150MHz 350mW Through Hole TO-92-3

Bipolar (BJT) Transistor NPN 50V 100mA 150MHz 350mW Through Hole TO-92-3

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - BC182L_D27Z - 141255-BC182L_D27Z - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - BC182L_D27Z
141255-BC182L_D27Z
TRANSISTORS - Transistors (BJT) - Single - BC182L_D27Z 141255-BC182L_D27Z
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 141255-BC182L_D27Z Packaging: Reel - TR Mounting: Through Hole Frequency - Transition: 150MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-92-3 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 600mV @ 5mA, 100mA Collector Cut-off Current(Max): 15nA (ICBO) Typical Gain (hFE) (Min): 120 @ 2mA, 5V Maximum Power Dissipation: 350mW Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Limited

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 141255-BC182L_D27Z
Packaging: Reel - TR
Mounting: Through Hole
Frequency - Transition: 150MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-92-3
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 600mV @ 5mA, 100mA
Collector Cut-off Current(Max): 15nA (ICBO)
Typical Gain (hFE) (Min): 120 @ 2mA, 5V
Maximum Power Dissipation: 350mW
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BC182L_D27Z - Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
BC182L_D27Z
Discrete Semiconductor Products - Transistors - Bipolar (BJT) BC182L_D27Z
TRANS NPN 50V 0.1A TO92-3

TRANS NPN 50V 0.1A TO92-3

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Acme Chip Technology Co., Limited
Product Category Transistors Transistors Bipolar RF Transistors
Product Number BC182L_D27Z-ND 141255-BC182L_D27Z BC182L_D27Z
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - BC182L_D27Z Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN; NPN
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