onsemi Single FETs, MOSFETs 5LN01M-TL-E

Description
N-Channel 50V 100mA (Ta) 150mW (Ta) Surface Mount MCP
Request a Quote Datasheet
Description
N-Channel 50V 100mA (Ta) 150mW (Ta) Surface Mount MCP
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 5LN01M-TL-E-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
5LN01M-TL-E-ND
Single FETs, MOSFETs 5LN01M-TL-E-ND
N-Channel 50V 100mA (Ta) 150mW (Ta) Surface Mount MCP

N-Channel 50V 100mA (Ta) 150mW (Ta) Surface Mount MCP

Buy Now Datasheet
 - 5LN01M-TL-E - Rochester Electronics
Newburyport, MA, United States
Small Signal Field-Effect Transistor, N-Channel, MOSFET

Small Signal Field-Effect Transistor, N-Channel, MOSFET

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 5LN01M-TL-E - 197860-5LN01M-TL-E - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 5LN01M-TL-E
197860-5LN01M-TL-E
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 5LN01M-TL-E 197860-5LN01M-TL-E
Manufacturer: ON Semiconductor Win Source Part Number: 197860-5LN01M-TL-E Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 150mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: 3-MCP Dimension: SC-70, SOT-323 Drain-Source Breakdown Voltage: 50V Continuous Drain Current at 25°C: 100mA (Ta) Max Gate Charge: 1.57nC @ 10V Max Input Capacitance: 6.6pF @ 10V Maximum Gate-Source Voltage: ±10V Maximum Rds On at Id,Vgs: 7.8 Ohm @ 50mA, 4V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Sufficient

Manufacturer: ON Semiconductor
Win Source Part Number: 197860-5LN01M-TL-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 150mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: 3-MCP
Dimension: SC-70, SOT-323
Drain-Source Breakdown Voltage: 50V
Continuous Drain Current at 25°C: 100mA (Ta)
Max Gate Charge: 1.57nC @ 10V
Max Input Capacitance: 6.6pF @ 10V
Maximum Gate-Source Voltage: ±10V
Maximum Rds On at Id,Vgs: 7.8 Ohm @ 50mA, 4V
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - 5LN01M-TL-E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
5LN01M-TL-E
Discrete Semiconductor Products - Transistors - FETs, MOSFETs 5LN01M-TL-E
MOSFET N-CH 50V 100MA 3MCP

MOSFET N-CH 50V 100MA 3MCP

Supplier's Site

Technical Specifications

  DigiKey Rochester Electronics Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors RF MOSFET Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 5LN01M-TL-E-ND 5LN01M-TL-E 197860-5LN01M-TL-E 5LN01M-TL-E
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - 5LN01M-TL-E Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel; N-Channel
Package Type SOT323; SC-70, SOT-323 SOT323; SC-70 (SOT-323) SOT3; SOT323; 3-MCP SOT323; SC-70, SOT-323
Packing Method Tape Reel; Tape & Reel Tape Reel; Reel - TR Tape Reel; Tape & Reel (TR)
Unlock Full Specs
to access all available technical data