onsemi 5HN02N

N-Channel Silicon MOSFET for ultrahigh-speed switching applications, housed in a 3-pin surface-mount package measuring 5.0 mm × 4.0 mm with a height of 1.3 mm. Rated for a drain-to-source voltage of 50 V, continuous drain current of 0.2 A, and power dissipation of 0.4 W. Features low on-resistance of 2.3 Ω at VGS=4 V, 4 V drive capability, and switching times of 12 ns rise time and 110 ns fall time. Meets the absolute maximum ratings for channel temperature up to 150 °C and storage temperature from -55 °C to +150 °C.