onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - 5HN01M-TL-E 5HN01M-TL-E

Description
Manufacturer: ON Semiconductor Win Source Part Number: 075925-5HN01M-TL-E Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 150mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: 3-MCP Dimension: SC-70, SOT-323 Drain-Source Breakdown Voltage: 50V Continuous Drain Current at 25°C: 100mA (Ta) Max Gate Charge: 1.4nC @ 10V Max Input Capacitance: 6.2pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 7.5 Ohm @ 50mA, 10V Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Balance Application Field: Used in Portable Devices, Consumer Electronics, Power Management, Industrial
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 075925-5HN01M-TL-E Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 150mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: 3-MCP Dimension: SC-70, SOT-323 Drain-Source Breakdown Voltage: 50V Continuous Drain Current at 25°C: 100mA (Ta) Max Gate Charge: 1.4nC @ 10V Max Input Capacitance: 6.2pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 7.5 Ohm @ 50mA, 10V Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Balance Application Field: Used in Portable Devices, Consumer Electronics, Power Management, Industrial
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 5HN01M-TL-E - 075925-5HN01M-TL-E - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 5HN01M-TL-E
075925-5HN01M-TL-E
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 5HN01M-TL-E 075925-5HN01M-TL-E
Manufacturer: ON Semiconductor Win Source Part Number: 075925-5HN01M-TL-E Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 150mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: 3-MCP Dimension: SC-70, SOT-323 Drain-Source Breakdown Voltage: 50V Continuous Drain Current at 25°C: 100mA (Ta) Max Gate Charge: 1.4nC @ 10V Max Input Capacitance: 6.2pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 7.5 Ohm @ 50mA, 10V Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Balance Application Field: Used in Portable Devices, Consumer Electronics, Power Management, Industrial

Manufacturer: ON Semiconductor
Win Source Part Number: 075925-5HN01M-TL-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 150mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: 3-MCP
Dimension: SC-70, SOT-323
Drain-Source Breakdown Voltage: 50V
Continuous Drain Current at 25°C: 100mA (Ta)
Max Gate Charge: 1.4nC @ 10V
Max Input Capacitance: 6.2pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 7.5 Ohm @ 50mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Balance
Application Field: Used in Portable Devices, Consumer Electronics, Power Management, Industrial

Buy Now Datasheet
Single FETs, MOSFETs - 5HN01M-TL-E-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
5HN01M-TL-E-ND
Single FETs, MOSFETs 5HN01M-TL-E-ND
N-Channel 50V 100mA (Ta) 150mW (Ta) Surface Mount MCP

N-Channel 50V 100mA (Ta) 150mW (Ta) Surface Mount MCP

Buy Now Datasheet
 - 5HN01M-TL-E - Rochester Electronics
Newburyport, MA, United States
Small Signal Field-Effect Transistor

Small Signal Field-Effect Transistor

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - 5HN01M-TL-E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
5HN01M-TL-E
Discrete Semiconductor Products - Transistors - FETs, MOSFETs 5HN01M-TL-E
MOSFET N-CH 50V 100MA 3MCP

MOSFET N-CH 50V 100MA 3MCP

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Rochester Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF MOSFET Transistors RF Transistors
Product Number 075925-5HN01M-TL-E 5HN01M-TL-E-ND 5HN01M-TL-E 5HN01M-TL-E
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - 5HN01M-TL-E Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 50 volts
PD 150 milliwatts
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