onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - 5HN01M-TL-E 5HN01M-TL-E

Manufacturer: ON Semiconductor
Win Source Part Number: 075925-5HN01M-TL-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 150mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: 3-MCP
Dimension: SC-70, SOT-323
Drain-Source Breakdown Voltage: 50V
Continuous Drain Current at 25°C: 100mA (Ta)
Max Gate Charge: 1.4nC @ 10V
Max Input Capacitance: 6.2pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 7.5 Ohm @ 50mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Balance
Application Field: Used in Portable Devices, Consumer Electronics, Power Management, Industrial

Small Signal Field-Effect Transistor

N-Channel 50V 100mA (Ta) 150mW (Ta) Surface Mount MCP

SMALL SIGNAL, FET Product overview: 5HN01M-TL-E from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-5HN01M-TL-E can be used for catalog matching and distributor lookup.