onsemi 10 V 70 mA 5.5 GHz Bipolar Transistor 55GN01MA-TL-E

Description
RF Transistor, NPN Single, 10 V, 70 mA, fT = 5.5 GHz, SC-70 / MCP3, 3000-REEL Product overview: 55GN01MA-TL-E from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 10 V, 70 mA, 5.5 GHz. Search-friendly keywords include transistor, BJT, switching, amplification, 10 V, 70 mA, 5.5 GHz, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-55GN01MA-TL-E can be used for catalog matching and distributor lookup.
  • Bipolar RF Transistors - 55GN01MA-TL-EOSTR-ND - DigiKey
    DigiKey
  • TRANSISTORS - RF Transistors (BJT) - 55GN01MA-TL-E - 053776-55GN01MA-TL-E - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 55GN01MA-TL-E - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
RF Transistor, NPN Single, 10 V, 70 mA, fT = 5.5 GHz, SC-70 / MCP3, 3000-REEL Product overview: 55GN01MA-TL-E from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 10 V, 70 mA, 5.5 GHz. Search-friendly keywords include transistor, BJT, switching, amplification, 10 V, 70 mA, 5.5 GHz, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-55GN01MA-TL-E can be used for catalog matching and distributor lookup.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
ERSAELECTRONICS PTE. LTD.
Singapore
10 V 70 mA 5.5 GHz Bipolar Transistor
283-55GN01MA-TL-E
10 V 70 mA 5.5 GHz Bipolar Transistor 283-55GN01MA-TL-E
RF Transistor, NPN Single, 10 V, 70 mA, fT = 5.5 GHz, SC-70 / MCP3, 3000-REEL Product overview: 55GN01MA-TL-E from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 10 V, 70 mA, 5.5 GHz. Search-friendly keywords include transistor, BJT, switching, amplification, 10 V, 70 mA, 5.5 GHz, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-55GN01MA-TL-E can be used for catalog matching and distributor lookup.

RF Transistor, NPN Single, 10 V, 70 mA, fT = 5.5 GHz, SC-70 / MCP3, 3000-REEL Product overview: 55GN01MA-TL-E from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 10 V, 70 mA, 5.5 GHz. Search-friendly keywords include transistor, BJT, switching, amplification, 10 V, 70 mA, 5.5 GHz, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-55GN01MA-TL-E can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Bipolar RF Transistors - 55GN01MA-TL-EOSTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Bipolar RF Transistors
55GN01MA-TL-EOSTR-ND
Bipolar RF Transistors 55GN01MA-TL-EOSTR-ND
RF Transistor NPN 10V 70mA 4.5GHz ~ 5.5GHz 400mW Surface Mount 3-MCP

RF Transistor NPN 10V 70mA 4.5GHz ~ 5.5GHz 400mW Surface Mount 3-MCP

Buy Now Datasheet
TRANSISTORS - RF Transistors (BJT) - 55GN01MA-TL-E - 053776-55GN01MA-TL-E - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - 55GN01MA-TL-E
053776-55GN01MA-TL-E
TRANSISTORS - RF Transistors (BJT) - 55GN01MA-TL-E 053776-55GN01MA-TL-E
Manufacturer: ON Semiconductor Win Source Part Number: 053776-55GN01MA-TL-E Packaging: Reel - TR Mounting: SMD (SMT) Gain: 10dB @ 1GHz Frequency - Transition: 4.5GHz to 5.5GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 1.9dB @ 1GHz Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 3-MCP Maximum Current Collector: 70mA VCEO Maximum Collector-Emitter Breakdown Voltage: 10V Typical Gain (hFE) (Min): 100 @ 10mA, 5V Maximum Power Dissipation: 400mW Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 053776-55GN01MA-TL-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 10dB @ 1GHz
Frequency - Transition: 4.5GHz to 5.5GHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 1.9dB @ 1GHz
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 3-MCP
Maximum Current Collector: 70mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 10V
Typical Gain (hFE) (Min): 100 @ 10mA, 5V
Maximum Power Dissipation: 400mW
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 55GN01MA-TL-E - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
55GN01MA-TL-E
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 55GN01MA-TL-E
RF TRANS NPN 10V 5.5GHZ 3MCP

RF TRANS NPN 10V 5.5GHZ 3MCP

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
55GN01MA-TL-E
Bipolar Transistors - BJT 55GN01MA-TL-E
Bipolar Transistors - BJT BIP NPN 70MA 10V FT=5.5G

Bipolar Transistors - BJT BIP NPN 70MA 10V FT=5.5G

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Technical Specifications

  ERSAELECTRONICS PTE. LTD. DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 283-55GN01MA-TL-E 55GN01MA-TL-EOSTR-ND 053776-55GN01MA-TL-E 55GN01MA-TL-E 55GN01MA-TL-E
Product Name 10 V 70 mA 5.5 GHz Bipolar Transistor Bipolar RF Transistors TRANSISTORS - RF Transistors (BJT) - 55GN01MA-TL-E Discrete Semiconductor Products - Transistors - Bipolar (BJT) Bipolar Transistors - BJT
Polarity NPN NPN NPN; NPN
IC(max) 70 milliamps
VCEO 10 volts 10 volts
VCBO 20 volts
PD 400 milliwatts
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