onsemi 10 V 70 mA 5.5 GHz Bipolar Transistor 55GN01FA-TL-H

Description
RF Transistor, NPN Single, 10 V, 70 mA, fT = 5.5 GHz, SOT-623 / SSFP, 8000-REEL Product overview: 55GN01FA-TL-H from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 10 V, 70 mA, 5.5 GHz. Search-friendly keywords include transistor, BJT, switching, amplification, 10 V, 70 mA, 5.5 GHz, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-55GN01FA-TL-H can be used for catalog matching and distributor lookup.
  • TRANSISTORS - RF Transistors (BJT) - 55GN01FA-TL-H - 053775-55GN01FA-TL-H - Win Source Electronics
    Win Source Electronics
  • Bipolar RF Transistors - 488-55GN01FA-TL-HTR-ND - DigiKey
    DigiKey
  • Bipolar RF Transistors - 488-55GN01FA-TL-HDKR-ND - DigiKey
    DigiKey
  • Bipolar RF Transistors - 488-55GN01FA-TL-HCT-ND - DigiKey
    DigiKey
  • Bipolar RF Transistors - 55GN01FA-TL-H - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 55GN01FA-TL-H - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
RF Transistor, NPN Single, 10 V, 70 mA, fT = 5.5 GHz, SOT-623 / SSFP, 8000-REEL Product overview: 55GN01FA-TL-H from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 10 V, 70 mA, 5.5 GHz. Search-friendly keywords include transistor, BJT, switching, amplification, 10 V, 70 mA, 5.5 GHz, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-55GN01FA-TL-H can be used for catalog matching and distributor lookup.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
ERSAELECTRONICS PTE. LTD.
Singapore
10 V 70 mA 5.5 GHz Bipolar Transistor
283-55GN01FA-TL-H
10 V 70 mA 5.5 GHz Bipolar Transistor 283-55GN01FA-TL-H
RF Transistor, NPN Single, 10 V, 70 mA, fT = 5.5 GHz, SOT-623 / SSFP, 8000-REEL Product overview: 55GN01FA-TL-H from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 10 V, 70 mA, 5.5 GHz. Search-friendly keywords include transistor, BJT, switching, amplification, 10 V, 70 mA, 5.5 GHz, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-55GN01FA-TL-H can be used for catalog matching and distributor lookup.

RF Transistor, NPN Single, 10 V, 70 mA, fT = 5.5 GHz, SOT-623 / SSFP, 8000-REEL Product overview: 55GN01FA-TL-H from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 10 V, 70 mA, 5.5 GHz. Search-friendly keywords include transistor, BJT, switching, amplification, 10 V, 70 mA, 5.5 GHz, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-55GN01FA-TL-H can be used for catalog matching and distributor lookup.

Supplier's Site
TRANSISTORS - RF Transistors (BJT) - 55GN01FA-TL-H - 053775-55GN01FA-TL-H - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - 55GN01FA-TL-H
053775-55GN01FA-TL-H
TRANSISTORS - RF Transistors (BJT) - 55GN01FA-TL-H 053775-55GN01FA-TL-H
Manufacturer: ON Semiconductor Win Source Part Number: 053775-55GN01FA-TL-H Packaging: Reel - TR Mounting: SMD (SMT) Gain: 11dB to 19dB @ 1GHz to 400MHz Frequency - Transition: 4.5GHz to 5.5GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 1.9dB @ 1GHz Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 3-SSFP Maximum Current Collector: 70mA VCEO Maximum Collector-Emitter Breakdown Voltage: 10V Typical Gain (hFE) (Min): 100 @ 10mA, 5V Maximum Power Dissipation: 250mW Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 053775-55GN01FA-TL-H
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 11dB to 19dB @ 1GHz to 400MHz
Frequency - Transition: 4.5GHz to 5.5GHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 1.9dB @ 1GHz
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 3-SSFP
Maximum Current Collector: 70mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 10V
Typical Gain (hFE) (Min): 100 @ 10mA, 5V
Maximum Power Dissipation: 250mW
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Bipolar RF Transistors - 488-55GN01FA-TL-HTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Bipolar RF Transistors
488-55GN01FA-TL-HTR-ND
Bipolar RF Transistors 488-55GN01FA-TL-HTR-ND
RF Transistor NPN 10V 70mA 4.5GHz ~ 5.5GHz 250mW Surface Mount 3-SSFP

RF Transistor NPN 10V 70mA 4.5GHz ~ 5.5GHz 250mW Surface Mount 3-SSFP

Buy Now Datasheet
Bipolar RF Transistors - 488-55GN01FA-TL-HDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Bipolar RF Transistors
488-55GN01FA-TL-HDKR-ND
Bipolar RF Transistors 488-55GN01FA-TL-HDKR-ND
RF TRANS NPN 10V 5.5GHZ 3-SSFP

RF TRANS NPN 10V 5.5GHZ 3-SSFP

Buy Now Datasheet
Bipolar RF Transistors - 488-55GN01FA-TL-HCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Bipolar RF Transistors
488-55GN01FA-TL-HCT-ND
Bipolar RF Transistors 488-55GN01FA-TL-HCT-ND
RF TRANS NPN 10V 5.5GHZ 3-SSFP

RF TRANS NPN 10V 5.5GHZ 3-SSFP

Buy Now Datasheet
Bipolar RF Transistors - 55GN01FA-TL-H - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Bipolar RF Transistors
55GN01FA-TL-H
Bipolar RF Transistors 55GN01FA-TL-H
RF TRANS NPN 10V 5.5GHZ 3SSFP

RF TRANS NPN 10V 5.5GHZ 3SSFP

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 55GN01FA-TL-H - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
55GN01FA-TL-H
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 55GN01FA-TL-H
RF TRANS NPN 10V 5.5GHZ 3SSFP

RF TRANS NPN 10V 5.5GHZ 3SSFP

Supplier's Site

Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics DigiKey ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Bipolar RF Transistors Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 283-55GN01FA-TL-H 053775-55GN01FA-TL-H 488-55GN01FA-TL-HTR-ND 55GN01FA-TL-H 55GN01FA-TL-H
Product Name 10 V 70 mA 5.5 GHz Bipolar Transistor TRANSISTORS - RF Transistors (BJT) - 55GN01FA-TL-H Bipolar RF Transistors Bipolar RF Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN; NPN NPN NPN; NPN
IC(max) 70 milliamps 70 milliamps
VCEO 10 volts 10 volts 10 volts
VCBO 20 volts
PD 250 milliwatts
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